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Metal contacts to n-GaN
Al, Au, Ti/Al and Ti/Au contacts were prepared on n-GaN and annealed up to 900 deg C. The structure, phase and morphology were studied by cross-sectional transmission and scanning electron microscopy as well as by X-ray diffraction (XRD), the electrical behaviour by current-voltage measurements. It...
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| Published in: | Applied surface science 2006-11, Vol.253 (2), p.655-661 |
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| Main Authors: | , , , , , , , , |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Citations: | Items that this one cites Items that cite this one |
| Online Access: | Get full text |
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| Summary: | Al, Au, Ti/Al and Ti/Au contacts were prepared on n-GaN and annealed up to 900 deg C. The structure, phase and morphology were studied by cross-sectional transmission and scanning electron microscopy as well as by X-ray diffraction (XRD), the electrical behaviour by current-voltage measurements. It was obtained that annealing resulted in interdiffusion, lateral diffusion along the surface, alloying and bowling up of the metal layers. The current-voltage characteristics of as-deposited Al and Ti/Al contacts were linear, while the Au and Ti/Au contacts exhibited rectifying behaviour. Except the Ti/Au contact which became linear, the contacts degraded during heat treatment at 900 deg C. The surface of Au and Ti/Au contacts annealed at 900 deg C have shown fractal-like structures revealed by scanning electron microscopy. Transmission electron microscopy and XRD investigations of the Ti/Au contact revealed that Au diffused into the n-GaN layer at 900 deg C. X-ray diffraction examinations showed, that new Ti2N, Au2Ga and Ga3Ti2 interface phases formed in Ti/Au contact at 900 deg C, new Ti2N phase formed in Ti/Al contact at 700 and 900 deg C, as well as new AlN interface phase developed in Ti/Al contact at 900 deg C. |
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| ISSN: | 0169-4332 1873-5584 |
| DOI: | 10.1016/j.apsusc.2005.12.167 |