Giant electric fields in unstrained GaN single quantum wells

We demonstrate that, even in unstrained GaN quantum wells with AlGaN barriers, there exist giant electric fields as high as 1.5 MV/cm. These fields, resulting from the interplay of the piezoelectric and spontaneous polarizations in the well and barrier layers due to Fermi level alignment, induce lar...

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Bibliographic Details
Published in:Applied physics letters 1999-06, Vol.74 (25), p.3827-3829
Main Authors: Langer, R., Simon, J., Ortiz, V., Pelekanos, N. T., Barski, A., André, R., Godlewski, M.
Format: Article
Language:English
Subjects:
Physics
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Summary:We demonstrate that, even in unstrained GaN quantum wells with AlGaN barriers, there exist giant electric fields as high as 1.5 MV/cm. These fields, resulting from the interplay of the piezoelectric and spontaneous polarizations in the well and barrier layers due to Fermi level alignment, induce large redshifts of the photoluminescence energy position and dramatically increase the carrier lifetime as the quantum well thickness increases.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.124193