Nitrogen and group-IV (Si, Ge) vacancy color centres in nano-diamonds: photoluminescence study at high temperature (25 °C-600 °C)

Raman scattering and photoluminescence measurements have been carried out on nano-diamonds containing Nitrogen-vacancy (NV−), Silicon-Vacancy (SiV−) and Germanium-vacancy (GeV−) synthesized by high pressure and high temperature method. Optical zero-phonon-line transition of these negatively charged...

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Bibliographic Details
Published in:Materials research express 2020-01, Vol.7 (1), p.15043
Main Authors: Zaghrioui, Mustapha, Agafonov, Viatcheslav N, Davydov, Valery A
Format: Article
Language:English
Subjects:
Color centers
color centre
Condensed Matter
Diamonds
Electron phonon interactions
Germanium
germanium vacancy centre
High temperature
nanodiamonds
Nanostructure
nitrogen vacancy centre
Optics
Phonons
Photoluminescence
photoluminescence spectroscopy
Physics
Quantum Physics
Raman spectra
Room temperature
Silicon
silicon vacancy centre
Vacancies
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Summary:Raman scattering and photoluminescence measurements have been carried out on nano-diamonds containing Nitrogen-vacancy (NV−), Silicon-Vacancy (SiV−) and Germanium-vacancy (GeV−) synthesized by high pressure and high temperature method. Optical zero-phonon-line transition of these negatively charged centres were measured from room temperature up to 600 °C under air. The results show that all nano-diamonds are stable at this temperature range and spectra are reproducible for heating and cooling cycles. Thermal behaviors of linewidth and zero phonon line, for SiV− and GeV− centres, are well described by the second-order electron-phonon interactions involving two-phonon and elastic processes.
ISSN:2053-1591
2053-1591
DOI:10.1088/2053-1591/ab6647