Design of AlGaN/AlN Dot‐in‐a‐Wire Heterostructures for Electron‐Pumped UV Emitters

This article describes the fabrication of nitrogen‐polar AlxGa1−xN/AlN (x = 0, 0.1) quantum dot (QD) superlattices (SLs) integrated along GaN nanowires (NWs) for application in electron‐pumped UV sources. The NWs are grown using plasma‐assisted molecular beam epitaxy on n‐type Si(111) wafers using a...

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2020-04, Vol.217 (7), p.n/a
Main Authors: Dimkou, Ioanna, Harikumar, Anjali, Ajay, Akhil, Donatini, Fabrice, Bellet-Amalric, Edith, Grenier, Adeline, den Hertog, Martien I., Purcell, Stephen T., Monroy, Eva
Format: Article
Language:English
Subjects:
AlGaN
Aluminum gallium nitrides
Aluminum nitride
Chemical Sciences
Diameters
Electron beams
Emitters
Emitters (electron)
Engineering Sciences
Epitaxial growth
Heterostructures
lamps
Molecular beam epitaxy
Nanowires
Nucleation
Physics
Quantum dots
Spectral sensitivity
Substrates
Superlattices
Thickness ratio
ultraviolet
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Summary:This article describes the fabrication of nitrogen‐polar AlxGa1−xN/AlN (x = 0, 0.1) quantum dot (QD) superlattices (SLs) integrated along GaN nanowires (NWs) for application in electron‐pumped UV sources. The NWs are grown using plasma‐assisted molecular beam epitaxy on n‐type Si(111) wafers using a low‐temperature AlN nucleation layer. Growth conditions are tuned to obtain a high density of noncoalesced NWs. To improve the uniformity of the height along the substrate, the growth begins with a long (≈900 nm) NW base, with a diameter of 30–50 nm. The AlxGa1−xN/AlN active region is 400 nm long (88 periods of QDs), long enough to collect the electron–hole pairs generated by an electron beam with an acceleration voltage ≤5 kV. The spectral response is tuned in the 340–258 nm range by varying the dot/barrier thickness ratio and the Al content in the dots. Internal quantum efficiencies as high as 63% are demonstrated. This article describes the fabrication of AlGaN/AlN quantum dot (QD) superlattices (SLs) on GaN nanowires (NWs) for application in electron‐pumped UV sources. The emission is tuned in the 340–258 nm range by varying the dot/barrier thickness ratio and the Al content in the dots.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.201900714