Thermoelectric properties improvement in Mg2Sn thin films by structural modification

Mg-Sn thin films (21 ≤ at. % Sn ≤ 42.5) were deposited by magnetron sputtering in the argon atmosphere. The structure and morphology of the films were characterized as a function of the composition. Mg2Sn structure was changed from stable face-centered cubic to metastable orthorhombic structure whil...

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Bibliographic Details
Published in:Journal of alloys and compounds 2019-08, Vol.797, p.1078-1085
Main Authors: Safavi, Mahsasadat, Martin, Nicolas, Linseis, Vincent, Palmino, Frank, Cherioux, Frederic, Billard, Alain, Arab Pour Yazdi, Mohammad
Format: Article
Language:English
Subjects:
Acoustics
Argon
Carrier density
Electron transport
Engineering Sciences
Figure of merit
Magnetron sputtering
Materials
Mg2Sn
Micro and nanotechnologies
Microelectronics
Morphology
Sputtering
Structural stability
Thermal stability
Thermoelectric properties
Thermoelectricity
Thin film
Thin films
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Summary:Mg-Sn thin films (21 ≤ at. % Sn ≤ 42.5) were deposited by magnetron sputtering in the argon atmosphere. The structure and morphology of the films were characterized as a function of the composition. Mg2Sn structure was changed from stable face-centered cubic to metastable orthorhombic structure while the content of Sn in the films increased. The influence of this structural modification on thermoelectric properties was discussed in a wide range of temperatures (30–200 °C). The film carrier concentration and mobility were measured to explain the electronic transport behavior as a function of the film structural modifications. The maximum figure of merit ZT ≈ 0.26 at 200 °C was reached for the film with 36 at. % Sn while a mixture of cubic and orthorhombic Mg2Sn structures coexisted. An annealing treatment was performed under vacuum (∼10−4 Pa) at different temperatures (up to 600 °C) to determine the limit of structural and morphological stability of this film. [Display omitted] •P-type Mg-Sn thin films (21 ≤ at. % Sn ≤ 42.5) were deposited by sputtering.•Mg2Sn face-centered cubic structure changed to orthorhombic by Sn content rising.•The influence of structural modification on thermoelectric properties was studied.•ZT ≈ 0.26 was reached at 200 °C as cubic and orthorhombic Mg2Sn structures coexisted.•Mg2Sn structure was stable until 500 °C and decomposed to Mg and Sn at T > 500 °C.
ISSN:0925-8388
1873-4669
DOI:10.1016/j.jallcom.2019.05.214