High robustness of epitaxial 4H-SiC graphene to oxidation processes

We present an experimental prove of high robustness of epitaxial 4H-SiC graphene to oxidation processes. During a post-fabrication cleaning procedure we noticed that epitaxial graphene is extremely stable to ozone treatment. We analyse graphene properties using both electron transport measurements a...

Full description

Saved in:
Bibliographic Details
Published in:Journal of physics. Conference series 2018-12, Vol.1124 (8), p.81020
Main Authors: Prudkovskiy, V.S., Katin, K.P., Maslov, M.M., Puech, P., Yakimova, R., Deligeorgis, G.
Format: Article
Language:English
Subjects:
Condensed Matter
Electron transport
Epitaxy
Graphene
Materials Science
Oxidation
Ozone
Physics
Robustness (mathematics)
Substrates
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We present an experimental prove of high robustness of epitaxial 4H-SiC graphene to oxidation processes. During a post-fabrication cleaning procedure we noticed that epitaxial graphene is extremely stable to ozone treatment. We analyse graphene properties using both electron transport measurements and numerical calculations. We ascribe this effect to the substrate topography, which significantly affects the graphene stability under UV/ozone treatment.
ISSN:1742-6588
1742-6596
1742-6596
1742-6588
DOI:10.1088/1742-6596/1124/8/081020