Suppression of self-organized surface nanopatterning on GaSb/InAs multilayers induced by low energy oxygen ion bombardment by using simultaneously sample rotation and oxygen flooding

•Degradation of depth resolution in sputter depth profiling of GaSb/InAs by ToF-SIMS.•Nanodots and ripples patterning formation under O2+ ion beam bombardment of GaSb/InAs multilayers.•Suppression of surface topography and significant enhancement of depth resolution by sample rotation and oxygen flo...

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Bibliographic Details
Published in:Applied surface science 2018-05, Vol.441, p.218-222
Main Authors: Beainy, Georges, Cerba, Tiphaine, Bassani, Franck, Martin, Mickaël, Baron, Thierry, Barnes, Jean-Paul
Format: Article
Language:English
Subjects:
Depth profiling
III-V heterostructures
Ion beam sputtering
Physics
Surface patterning
ToF-SIMS
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Summary:•Degradation of depth resolution in sputter depth profiling of GaSb/InAs by ToF-SIMS.•Nanodots and ripples patterning formation under O2+ ion beam bombardment of GaSb/InAs multilayers.•Suppression of surface topography and significant enhancement of depth resolution by sample rotation and oxygen flooding. Time of flight secondary ion mass spectrometry (ToF-SIMS) is a well-adapted analytical method for the chemical characterization of concentration profiles in layered or multilayered materials. However, under ion beam bombardment, initially smooth material surface becomes morphologically unstable. This leads to abnormal secondary ion yields and depth profile distortions. In this contribution, we explore the surface topography and roughening evolution induced by O2+ ion bombardment on GaSb/InAs multilayers. We demonstrate the formation of nanodots and ripples patterning according to the ion beam energy. Since the latter are undesirable for ToF-SIMS analysis, we managed to totally stop their growth by using simultaneously sample rotation and oxygen flooding. This unprecedented coupling between these two latter mechanisms leads to a significant enhancement in depth profiles resolution.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2018.02.009