Photoluminescence probing of non-radiative channels in hydrogenated In(Ga)As/GaAs quantum dots

We report here on the efficient use of hydrogenation as a tool to investigate the intrinsic properties of non-radiative recombination channels in a low-pressure metal-organic vapor phase epitaxy grown quantum dots (QDs) array emitting around 1.3 μm. It is shown that hydrogenation reduces by a factor...

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Bibliographic Details
Published in:Journal of crystal growth 2004-03, Vol.264 (1), p.334-338
Main Authors: Saint-Girons, G., Lemaı&#x0302, tre, A., Navarro-Paredes, V., Patriarche, G., Rao, E.V.K., Sagnes, I., Theys, B.
Format: Article
Language:English
Subjects:
A1. Defects
A1. Nanostructures
A3. Metalorganic vapor phase epitaxy
Condensed Matter
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Iii-v semiconductors
Materials Science
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
Photoluminescence
Physics
Quantum dots
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Summary:We report here on the efficient use of hydrogenation as a tool to investigate the intrinsic properties of non-radiative recombination channels in a low-pressure metal-organic vapor phase epitaxy grown quantum dots (QDs) array emitting around 1.3 μm. It is shown that hydrogenation reduces by a factor of two the flow of charge carriers to non-radiative channels in QDs related to the presence of impurities and further suppresses completely the non-radiative recombinations originating from the stacking faults and dangling bonds. Most importantly, hydrogenation improves the room temperature photoluminescence intensity of the ≈1.3 μm emitting In(Ga)As/GaAs QDs by a factor close to ten.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2004.01.017