Direct growth of InAsP/InP quantum well heterostructures on Si using crystalline SrTiO3/Si templates

Integrating III-V semiconductors on Si is one of the major challenges of epitaxial growth and presents important applicative interest. We describe here an approach based on the use of crystalline SrTiO3 (STO)/Si templates. The structural and optical properties of InAsP/InP quantum well heterostructu...

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Bibliographic Details
Published in:Applied physics letters 2010-11, Vol.97 (20)
Main Authors: Gobaut, B., Penuelas, J., Cheng, J., Chettaoui, A., Largeau, L., Hollinger, G., Saint-Girons, G.
Format: Article
Language:English
Subjects:
Condensed Matter
Materials Science
Physics
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Summary:Integrating III-V semiconductors on Si is one of the major challenges of epitaxial growth and presents important applicative interest. We describe here an approach based on the use of crystalline SrTiO3 (STO)/Si templates. The structural and optical properties of InAsP/InP quantum well heterostructures grown directly on Si and on STO/Si templates are compared. Using STO/Si templates strongly improves the structural properties of the III-V heterostructure, and allows observing room-temperature photoluminescence from the quantum well.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3520143