Influence of post-deposition selenium supply on Cu(In,Ga)Se2-based solar cell properties

Cu(In,Ga)Se2 (CIGSe) layers have been deposited by the 3-stage process and once the growth was completed, the structures have been kept at high temperature for 50min with or without Se supply. Both the resulting CIGSe layer and related device properties are compared with those obtained when the subs...

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Bibliographic Details
Published in:Thin solid films 2015-05, Vol.582, p.43-46
Main Authors: Barreau, N., Zabierowski, P., Arzel, L., Igalson, M., Macielak, K., Urbaniak, A., Lepetit, T., Painchaud, T., Dönmez, A., Kessler, J.
Format: Article
Language:English
Subjects:
Alkali
Availability
Condensed Matter
COPPER INDIUM SELENIDE
COPPER SELENIDE
CRYSTAL STRUCTURE
Cu(In,Ga)Se2
DEPOSITION
Devices
Doping
ELECTRONIC PRODUCTS
Materials Science
Orientation
Physics
Selenium
Solar cells
SUPPLIES
THIN FILMS
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Summary:Cu(In,Ga)Se2 (CIGSe) layers have been deposited by the 3-stage process and once the growth was completed, the structures have been kept at high temperature for 50min with or without Se supply. Both the resulting CIGSe layer and related device properties are compared with those obtained when the substrate is cooled down right after the deposition. Moreover, such experiments have been performed with and without alkali availability. The results show that keeping the absorber at high temperature differently impacts [Ga]/([In+Ga]) atomic ratio distribution and crystalline preferential orientation depending on whether Se is supplied. Moreover, this work shows that chalcogen supply can be detrimental for cell performance when the CIGSe contains alkali and in contrast be beneficial when the CIGSe is free of alkali. These observations suggest an intimate relationship between alkali and Se. •Annealing under Se flux appears detrimental if the absorber layer contains alkali.•The detrimental impact is due to increased interface recombination.•The same post-deposition treatment is beneficial if the absorber is alkali-free.•Alkali-free performance is improved thanks to increased net acceptor density.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2014.10.090