Atomic scale characterization of SiO2/4H-SiC interfaces in MOSFETs devices

The breakthrough of 4H-SiC MOSFETs is stemmed mainly due to the mobility degradation in their channel in spite of the good physical intrinsic material properties. Here, two different n-channel 4H-SiC MOSFETs are characterized in order to analyze the elemental composition at the SiC/SiO2 interface an...

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Bibliographic Details
Published in:Solid state communications 2015-11, Vol.221, p.28-32
Main Authors: Beltrán, A.M., Duguay, S., Strenger, C., Bauer, A.J., Cristiano, F., Schamm-Chardon, S.
Format: Article
Language:English
Subjects:
Condensed Matter
Materials Science
Physics
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Summary:The breakthrough of 4H-SiC MOSFETs is stemmed mainly due to the mobility degradation in their channel in spite of the good physical intrinsic material properties. Here, two different n-channel 4H-SiC MOSFETs are characterized in order to analyze the elemental composition at the SiC/SiO2 interface and its relationship to their electrical properties. Elemental distribution analyses performed by EELS reveal the existence of a transition layer between the SiC and the SiO2 regions of the same width for both MOSFETs despite a factor of nearly two between their electron mobility. Additional 3D compositional mapping by atom probe tomography corroborates these results, particularly the absence of an anomalous carbon distribution around the SiC/SiO2 interface. •Mobility degradation in 4H-SiC MOSFETs.•Structural analysis by HRTEM images and compositional distribution by STEM–EELS.•Three-dimensional characterization by atom probe tomography (APT).•No C anomalous distribution at the interface; instead a smooth transition layer.•Roughness at the interface SiC/SiO2.
ISSN:0038-1098
1879-2766
DOI:10.1016/j.ssc.2015.08.017