Self-Equilibration of the Diameter of Ga-Catalyzed GaAs Nanowires

Designing strategies to reach monodispersity in fabrication of semiconductor nanowire ensembles is essential for numerous applications. When Ga-catalyzed GaAs nanowire arrays are grown by molecular beam epitaxy with help of droplet-engineering, we observe a significant narrowing of the diameter dist...

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Bibliographic Details
Published in:Nano letters 2015-08, Vol.15 (8), p.5580-5584
Main Authors: Dubrovskii, V. G, Xu, T, Álvarez, A. Díaz, Plissard, S. R, Caroff, P, Glas, F, Grandidier, B
Format: Article
Language:English
Subjects:
Arrays
Chemical Sciences
Condensed Matter
Cristallography
Droplets
Gallium
Gallium arsenide
Gallium arsenides
Material chemistry
Materials Science
Nanowires
Physics
Quantum Physics
Semiconductors
Size distribution
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Summary:Designing strategies to reach monodispersity in fabrication of semiconductor nanowire ensembles is essential for numerous applications. When Ga-catalyzed GaAs nanowire arrays are grown by molecular beam epitaxy with help of droplet-engineering, we observe a significant narrowing of the diameter distribution of the final nanowire array with respect to the size distribution of the initial Ga droplets. Considering that the droplet serves as a nonequilibrium reservoir of a group III metal, we develop a model that demonstrates a self-equilibration effect on the droplet size in self-catalyzed III–V nanowires. This effect leads to arrays of nanowires with a high degree of uniformity regardless of the initial conditions, while the stationary diameter can be further finely tuned by varying the spacing of the array pitch on patterned Si substrates.
ISSN:1530-6984
1530-6992
DOI:10.1021/acs.nanolett.5b02226