Multi-wavelength enhancement of silicon Raman scattering by nanoscale laser surface ablation

•Silicon nanohole arrays are prepared using laser ablation.•An enhancement of the main Raman silicon mode is observed.•This enhancement is studied with different laser excitations and powers.•The results demonstrate the potentiality of such nanostructures for the development of silicon photonics. In...

Full description

Saved in:
Bibliographic Details
Published in:Applied surface science 2013-11, Vol.284, p.545-548
Main Authors: Merlen, A., Sangar, A., Torchio, P., Kallepalli, L.N.D., Grojo, D., Utéza, O., Delaporte, P.
Format: Article
Language:English
Subjects:
Ablation
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Engineering Sciences
Exact sciences and technology
Laser ablation
Lasers
Nanostructure
Optics
Photonic
Physics
Raman scattering
Raman spectroscopy
Silicon
Structural damage
Wavelengths
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:•Silicon nanohole arrays are prepared using laser ablation.•An enhancement of the main Raman silicon mode is observed.•This enhancement is studied with different laser excitations and powers.•The results demonstrate the potentiality of such nanostructures for the development of silicon photonics. In this paper, we produce nanoholes on a silicon surface by laser ablation. Those nanoholes lead to a yield enhancement of light–matter interaction. Performing Raman spectroscopy on silicon, an enhancement of its main Raman mode is observed: it is twice higher with the nanoholes compared to a flat surface. Such a feature appears whatever the excitation wavelength (488, 514.5 and 632.8nm) and the laser power, revealing a broad band light–matter interaction enhancement. In addition, no change in the position and shape of the main Raman mode of silicon is observed, suggesting that no structural damages are induced by laser ablation. These results clearly demonstrate the potentiality of such nanostructures for the further development of silicon photonics.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2013.07.131