Gas-assisted electron-beam-induced nanopatterning of high-quality Si-based insulator

An oxygen-assisted electron-beam-induced deposition (EBID) process, in which an oxygen flow and the vapor phase of the precursor, tetraethyl orthosilicate (TEOS), are both mixed and delivered through a single needle, is described. The optical properties of the SiO(2+δ) (− 0.04 ≤ δ ≤ +0.28) are compa...

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Bibliographic Details
Published in:Nanotechnology 2014-04, Vol.25 (15), p.155301-7
Main Authors: Riazanova, A V, Costanzi, B N, Aristov, A, Rikers, Y G M, Ström, V, Mulders, J J L, Kabashin, A V, Dahlberg, E Dan, Belova, L M
Format: Article
Language:English
Subjects:
3D nanopatterning
Applied sciences
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Deposition
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in multilayers, nanoscale materials and structures
Electronics
Engineering Sciences
Exact sciences and technology
gas-assisted EBID
high-purity insulator
Materials science
Methods of nanofabrication
Molecular electronics, nanoelectronics
Nanoscale pattern formation
Nanostructure
Needles
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
Optics
Photonic
Physics
Position (location)
purification
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon dioxide
Tetraethyl orthosilicate
tetraethyl orthosilicate (TEOS)
Three dimensional
Vapor phases
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Description
Summary:An oxygen-assisted electron-beam-induced deposition (EBID) process, in which an oxygen flow and the vapor phase of the precursor, tetraethyl orthosilicate (TEOS), are both mixed and delivered through a single needle, is described. The optical properties of the SiO(2+δ) (− 0.04 ≤ δ ≤ +0.28) are comparable to fused silica. The electrical resistivity of both single-needle and double-needle SiO(2+δ) are comparable (greater than 7 GΩ cm) and a measured breakdown field is greater than 400 V μm−1. Compared to the double-needle process the advantage of the single-needle technique is the ease of alignment and the proximity to the deposition location, which facilitates fabrication of complex 3D structures for nanophotonics, photovoltaics, micro- and nano-electronics applications.
ISSN:0957-4484
1361-6528
1361-6528
DOI:10.1088/0957-4484/25/15/155301