Combined Raman study of InGaAsN from the N-impurity and InGaAs-matrix sides

The authors report a Raman study of In0.08Ga0.92As0.98N0.02 covering both N- and InGaAs-related spectral ranges, supported by ab initio and phenomenological modeling of the spectra. The authors argue that the crystal self-organizes at different scales to reduce the N-induced strain. Locally, this is...

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Bibliographic Details
Published in:Applied physics letters 2007-07, Vol.91 (5)
Main Authors: Chafi, A., Pagès, O., Postnikov, A. V., Gleize, J., Sallet, V., Rzepka, E., Li, L. H., Jusserand, B., Harmand, J. C.
Format: Article
Language:English
Subjects:
Condensed Matter
Physics
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Summary:The authors report a Raman study of In0.08Ga0.92As0.98N0.02 covering both N- and InGaAs-related spectral ranges, supported by ab initio and phenomenological modeling of the spectra. The authors argue that the crystal self-organizes at different scales to reduce the N-induced strain. Locally, this is achieved by In-N-Ga3 configurations, as is well known. Moreover, a long scale organization occurs in the InGaAs matrix, away from N. This is apparent in the over representation of the “short” Ga–As bonds from the In-rich region, as compared with random InGaAs. Quantitative insight is derived at the mesoscopic scale from the 1-bond→2-phonon “percolation”-type behavior of the dominant Ga–As species.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2767244