Understanding the amorphous-to-microcrystalline silicon transition in SiF4/H2/Ar gas mixtures

We report on the growth of microcrystalline silicon films from the dissociation of SiF4/H2/Ar gas mixtures. For this growth chemistry, the formation of HF molecules provides a clear signature of the amorphous to microcrystalline growth transition. Depositing films from silicon tetrafluoride requires...

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Bibliographic Details
Published in:The Journal of chemical physics 2014-06, Vol.140 (23), p.234706-234706
Main Authors: Dornstetter, Jean-Christophe, Bruneau, Bastien, Bulkin, Pavel, Johnson, Erik V, Roca i Cabarrocas, Pere
Format: Article
Language:English
Subjects:
Critical flow
Engineering Sciences
Flow velocity
Gas mixtures
Organic chemistry
Photovoltaic cells
Physics
Plasma chemistry
Silicon
Silicon films
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Summary:We report on the growth of microcrystalline silicon films from the dissociation of SiF4/H2/Ar gas mixtures. For this growth chemistry, the formation of HF molecules provides a clear signature of the amorphous to microcrystalline growth transition. Depositing films from silicon tetrafluoride requires the removal of F produced by SiF4 dissociation, and this removal is promoted by the addition of H2 which strongly reacts with F to form HF molecules. At low H2 flow rates, the films grow amorphous as all the available hydrogen is consumed to form HF. Above a critical flow rate, corresponding to the full removal of F, microcrystalline films are produced as there is an excess of atomic hydrogen in the plasma. A simple yet accurate phenomenological model is proposed to explain the SiF4/H2 plasma chemistry in accordance with experimental data. This model provides some rules of thumb to achieve high deposition rates for microcrystalline silicon, namely, that increased RF power must be balanced by an increased H2 flow rate.
ISSN:0021-9606
1089-7690
DOI:10.1063/1.4883503