Half integer quantum Hall effect in high mobility single layer epitaxial graphene

The quantum Hall effect, with a Berry’s phase of π is demonstrated here on a single graphene layer grown on the C-face of 4H silicon carbide. The mobility is ∼20 000 cm2/V⋅s at 4 K and 15 000 cm2/V⋅s at 300 K despite contamination and substrate steps. This is comparable to the best exfoliated graphe...

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Bibliographic Details
Published in:Applied physics letters 2009-11, Vol.95 (22)
Main Authors: Wu, Xiaosong, Hu, Yike, Ruan, Ming, Madiomanana, Nerasoa K, Hankinson, John, Sprinkle, Mike, Berger, Claire, de Heer, Walt A.
Format: Article
Language:English
Subjects:
Condensed Matter
Mesoscopic Systems and Quantum Hall Effect
Physics
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Summary:The quantum Hall effect, with a Berry’s phase of π is demonstrated here on a single graphene layer grown on the C-face of 4H silicon carbide. The mobility is ∼20 000 cm2/V⋅s at 4 K and 15 000 cm2/V⋅s at 300 K despite contamination and substrate steps. This is comparable to the best exfoliated graphene flakes on SiO2 and an order of magnitude larger than Si-face epitaxial graphene monolayers. These and other properties indicate that C-face epitaxial graphene is a viable platform for graphene-based electronics.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3266524