Multifunctional Devices and Logic Gates With Undoped Silicon Nanowires

We report on the electronic transport properties of multiple-gate devices fabricated from undoped silicon nanowires. Understanding and control of the relevant transport mechanisms was achieved by means of local electrostatic gating and temperature-dependent measurements. The roles of the source/drai...

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Bibliographic Details
Published in:Nano letters 2012-06, Vol.12 (6), p.3074-3079
Main Authors: Mongillo, Massimo, Spathis, Panayotis, Katsaros, Georgios, Gentile, Pascal, De Franceschi, Silvano
Format: Article
Language:English
Subjects:
Applied sciences
Barriers
Channels
Condensed Matter
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Devices
Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronics
Equipment Design
Equipment Failure Analysis
Exact sciences and technology
Logic circuits
Materials Science
Molecular electronics, nanoelectronics
Nanocrystalline materials
Nanoscale materials and structures: fabrication and characterization
Nanostructure
Nanostructures - chemistry
Nanostructures - ultrastructure
Nanotechnology - instrumentation
Nanowires
Physics
Quantum wires
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductors
Signal Processing, Computer-Assisted - instrumentation
Silicon
Silicon - chemistry
Transistors, Electronic
Tuning
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Summary:We report on the electronic transport properties of multiple-gate devices fabricated from undoped silicon nanowires. Understanding and control of the relevant transport mechanisms was achieved by means of local electrostatic gating and temperature-dependent measurements. The roles of the source/drain contacts and of the silicon channel could be independently evaluated and tuned. Wrap gates surrounding the silicide–silicon contact interfaces were proved to be effective in inducing a full suppression of the contact Schottky barriers, thereby enabling carrier injection down to liquid helium temperature. By independently tuning the effective Schottky barrier heights, a variety of reconfigurable device functionalities could be obtained. In particular, the same nanowire device could be configured to work as a Schottky barrier transistor, a Schottky diode, or a p–n diode with tunable polarities. This versatility was eventually exploited to realize a NAND logic gate with gain well above one.
ISSN:1530-6984
1530-6992
DOI:10.1021/nl300930m