Planar Hall resistance ring sensor based on NiFe/Cu/IrMn trilayer structure

We have investigated the sensitivity of a planar Hall resistance sensor as a function of the ring radius in the trilayer structure Ta(3)/IrMn(10)/Cu(0.2)/NiFe(10)/Ta(3) (nm). The diagonal components of magnetoresistivity tensor in rectangular prism corresponding to anisotropic magnetoresistance are...

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Bibliographic Details
Published in:Journal of applied physics 2013-02, Vol.113 (6)
Main Authors: Sinha, Brajalal, Quang Hung, Tran, Sri Ramulu, Torati, Oh, Sunjong, Kim, Kunwoo, Kim, Dong-Young, Terki, Ferial, Kim, CheolGi
Format: Article
Language:English
Subjects:
Cancellation
Instrumentation and Detectors
Iron compounds
Magnetoresistance
Magnetoresistivity
Mathematical analysis
Nickel base alloys
Nickel compounds
Physics
Sensors
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Summary:We have investigated the sensitivity of a planar Hall resistance sensor as a function of the ring radius in the trilayer structure Ta(3)/IrMn(10)/Cu(0.2)/NiFe(10)/Ta(3) (nm). The diagonal components of magnetoresistivity tensor in rectangular prism corresponding to anisotropic magnetoresistance are few ten times larger than that of off-diagonal component corresponding to planar Hall resistance. However, it is noteworthy that the resultant contribution is governed by the off-diagonal components due to the cancellation of diagonal components in the self-balanced bridge configuration. Both the experimental and theoretical results show that the sensitivity varies linearly with the ring radius. In multi-ring architecture, the circumference can be increased to a limit, which consequently enhances sensitivity. We found the sensitivity of the investigated 7-rings planar Hall to be more than 600 μV/Oe.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4790139