Si–SiC core–shell nanowires

The objective of this study is to grow Si–SiC core–shell nanowires (NWs) for bio-nano-sensors. The idea is to benefit from the electronic transport into the Si core NW and from the biocompatibility of the SiC shell all around the Si NW. Silicon nanowires (NWs) have been first obtained by a top-down...

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Bibliographic Details
Published in:Journal of crystal growth 2013-01, Vol.363, p.158-163
Main Authors: Ollivier, M., Latu-Romain, L., Martin, M., David, S., Mantoux, A., Bano, E., Soulière, V., Ferro, G., Baron, T.
Format: Article
Language:English
Subjects:
A1. FIB/SEM
A3. Chemical vapor deposition processes
B1. Nanowire
B1. Silicon carbide
B2. Semiconducting silicon
B3. Core–shell
Chemical Sciences
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Material chemistry
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Methods of nanofabrication
Nanoscale materials and structures: fabrication and characterization
Physics
Quantum wires
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Summary:The objective of this study is to grow Si–SiC core–shell nanowires (NWs) for bio-nano-sensors. The idea is to benefit from the electronic transport into the Si core NW and from the biocompatibility of the SiC shell all around the Si NW. Silicon nanowires (NWs) have been first obtained by a top-down approach. Before carburization, in situ deoxidation under H2 allowed significant smoothening and faceting of the Si NWs sidewalls. Then, Si NWs have been carburized under methane or propane at atmospheric pressure and at temperatures ≥1000°C. Carburization of Si NWs leads to Si–SiC core–shell NWs with a thin (∼3nm), continuous and single crystalline cubic SiC shell. The 3C–SiC shell has been further thickened by chemical vapor deposition and preferential growth of 3C–SiC has been observed on the sidewalls of NWs. Based both on the electronic transport properties of silicon and on the biocompatibility of SiC, these new 1D-nanostructures could be an ideal object for nano-bio-sensors. ► Carburization of silicon nanowires. ► TEM study of the crystal growth of the SiC layer. ► Epitaxial growth of 3C–SiC on Si nanowires. ► Discussion of the Si diffusion through the SiC layer
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2012.10.039