Comparison study on performances and robustness between SiC MOSFET & JFET devices – Abilities for aeronautics application

This paper deals with performances and reliability aspects of MOSFET and JFET power transistors devices based on silicon carbide technology. The purpose of this article is to evaluate the abilities and effects of each technology on the conception of power converter for avionic applications. Experime...

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Bibliographic Details

Published in:	Microelectronics and reliability 2012-09, Vol.52 (9-10), p.1859-1864
Main Authors:	Othman, D., Berkani, M., Lefebvre, S., Ibrahim, A., Khatir, Z., Bouzourene, A.
Format:	Article
Language:	English
Subjects:	Applied sciences Electric power Electrical engineering. Electrical power engineering Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Engineering Sciences Exact sciences and technology Other multijunction devices. Power transistors. Thyristors Power electronics, power supplies Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
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