Thermal conductivity of InAs quantum dot stacks using AlAs strain compensating layers on InP substrate

► The thermal conductivity of InAs on InP (113)B quantum dots stacks is measured. ► The growth of a close stack of 100 layers of InAs using AlAs strain compensating layers is presented. ► New data on the thermal conductivity of InP n-doped susbtrate are given. The growth and thermal conductivity of...

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Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2012-06, Vol.177 (11), p.882-886
Main Authors: Salman, S., Folliot, H., Le Pouliquen, J., Chevalier, N., Rohel, T., Paranthoën, C., Bertru, N., Labbé, C., Letoublon, A., Le Corre, A.
Format: Article
Language:English
Subjects:
Atomic force microscopy
Condensed Matter
Engineering Sciences
Heat transfer
InAs quantum dots
Indium arsenides
Indium phosphides
InP substrate
Materials Science
Micro and nanotechnologies
Microelectronics
Optics
Photonic
Physics
Quantum dots
Stacks
Strain
Thermal conductivity
Thermoelectricity
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Summary:► The thermal conductivity of InAs on InP (113)B quantum dots stacks is measured. ► The growth of a close stack of 100 layers of InAs using AlAs strain compensating layers is presented. ► New data on the thermal conductivity of InP n-doped susbtrate are given. The growth and thermal conductivity of InAs quantum dot (QD) stacks embedded in GaInAs matrix with AlAs compensating layers deposited on (113)B InP substrate are presented. The effect of the strain compensating AlAs layer is demonstrated through Atomic Force Microscopy (AFM) and X-ray diffraction structural analysis. The thermal conductivity (2.7W/mK at 300K) measured by the 3ω method reveals to be clearly reduced in comparison with a bulk InGaAs layer (5W/mK). In addition, the thermal conductivity measurements of S doped InP substrates and the SiN insulating layer used in the 3ω method in the 20–200°C range are also presented. An empirical law is proposed for the S doped InP substrate, which slightly differs from previously presented results.
ISSN:0921-5107
1873-4944
DOI:10.1016/j.mseb.2012.03.053