Porous SiOCH integration: etch challenges with a trench first metal hard mask approach

The use of a metallic hard mask approach for porous dielectric film integration implies for patterning processes, different difficulties like dimensional control, bottom line roughness and residue formation or chamber conditioning. In this paper we propose to present these issues and associated solu...

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Bibliographic Details
Published in:ECS transactions 2011, Vol.34
Main Authors: Possémé, Nicolas, David, Thibaut, Chevolleau, Thierry, Darnon, Maxime, Brun, Philippe, Guillermet, Marc, Oddou, Jean Pierre, Barnola, Sébastien, Bailly, Fanny, Bouyssou, Régis, Ducote, Julien, Hurand, Romain, Vérove, Christophe, Joubert, Olivier R.
Format: Article
Language:English
Subjects:
Engineering Sciences
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Summary:The use of a metallic hard mask approach for porous dielectric film integration implies for patterning processes, different difficulties like dimensional control, bottom line roughness and residue formation or chamber conditioning. In this paper we propose to present these issues and associated solutions for p-SiOCH integration in dual damascene structure using a trench first metallic hard mask approach.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.3567609