Improved GeOI substrates for pMOSFET off-state leakage control

The origin of parasitic leakage that occurs in some GeOI pMOSFETs has been investigated and located at the Ge-buried oxide (BOX) interface. Silicon passivation of that interface was found to be effective in reducing this current. An optimum thickness of the buried silicon capping is required to redu...

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Bibliographic Details
Published in:Microelectronic engineering 2009-07, Vol.86 (7), p.1585-1588
Main Authors: Romanjek, K., Augendre, E., Van Den Daele, W., Grandchamp, B., Sanchez, L., Le Royer, C., Hartmann, J.-M., Ghyselen, B., Guiot, E., Bourdelle, K., Cristoloveanu, S., Boulanger, F., Clavelier, L.
Format: Article
Language:English
Subjects:
Applied sciences
Condensed Matter
Electronics
Engineering Sciences
Exact sciences and technology
Ge-buried oxide (BOX) interface
Germanium on insulator (GeOI)
Micro and nanotechnologies
Microelectronics
Other
Physics
pMOSFET, Parasitic leakage
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon passivation
Transistors
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Summary:The origin of parasitic leakage that occurs in some GeOI pMOSFETs has been investigated and located at the Ge-buried oxide (BOX) interface. Silicon passivation of that interface was found to be effective in reducing this current. An optimum thickness of the buried silicon capping is required to reduce the parasitic leakage current while preserving Ge-like back channel transport properties.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2009.03.069