Preliminary results of storage accelerated aging test on InP/InGaAs DHBT

We report on the reliability of InP HBT technology which has applications in very high-speed ICs. This work presents the storage accelerated aging tests results performed on InP/InGaAs HBT at stress temperatures of 180, 210 and 240 °C up to 3000 h. We have performed aging tests for two generations o...

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Bibliographic Details
Published in:Microelectronics and reliability 2010-09, Vol.50 (9), p.1548-1553
Main Authors: Koné, G.A., Grandchamp, B., Hainaut, C., Marc, F., Maneux, C., Labat, N., Zimmer, T., Nodjiadjim, V., Godin, J.
Format: Article
Language:English
Subjects:
Accelerated aging tests
Applied sciences
Collectors
Design. Technologies. Operation analysis. Testing
Electronics
Engineering Sciences
Exact sciences and technology
High speed
Indium gallium arsenides
Indium phosphides
Integrated circuits
Origins
Planarization
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Simulation
Transistors
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Summary:We report on the reliability of InP HBT technology which has applications in very high-speed ICs. This work presents the storage accelerated aging tests results performed on InP/InGaAs HBT at stress temperatures of 180, 210 and 240 °C up to 3000 h. We have performed aging tests for two generations of InP HBT which differ from the collector doping level and from material used for planarization. From the Gummel plots, we note that the major degradation mechanism is located at the base–emitter junction periphery. Investigations on the physical origin of the observed failure mechanism has been performed using TCAD simulations.
ISSN:0026-2714
1872-941X
DOI:10.1016/j.microrel.2010.07.141