Changes in surface stress, morphology and chemical composition of silica and silicon nitride surfaces during the etching by gaseous HF acid

HF acid attack of SiO 2 and Si 3N 4 substrates is analyzed to improve the sensitivity of a sensor based on microcantilever. Ex situ analysis of the etching using XPS, SIMS and AFM show significant changes in the anisotropy and the rate of the etching of the oxides on SiO 2 and Si 3N 4 surface. Those...

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Bibliographic Details
Published in:Applied surface science 2007-03, Vol.253 (11), p.5101-5108
Main Authors: Mertens, Johann, Finot, Eric, Heintz, Olivier, Nadal, Marie-Hélène, Eyraud, Vincent, Cathelat, Arnaud, Legay, Guillaume, Bourillot, Eric, Dereux, Alain
Format: Article
Language:English
Subjects:
Atomic force microscope (AFM)
Cantilever
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Engineering Sciences
Exact sciences and technology
Hydrofluoric acid (HF)
Micro and nanotechnologies
Microelectronics
Physics
Secondary ion mass spectroscopy (SIMS)
Sensor
Silicon
X-ray photoelectron spectroscopy (XPS)
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Summary:HF acid attack of SiO 2 and Si 3N 4 substrates is analyzed to improve the sensitivity of a sensor based on microcantilever. Ex situ analysis of the etching using XPS, SIMS and AFM show significant changes in the anisotropy and the rate of the etching of the oxides on SiO 2 and Si 3N 4 surface. Those differences influence the kinetic evolution of the plastic bending deflection of the cantilever coated with SiO 2 and Si 3N 4 layer, respectively. The linear dependence between the HF concentration and the Si 3N 4 cantilever bending corresponds to a deep attack of the layer whereas the non-linear behavior observed for SiO 2 layer can be explained by a combination of deep and lateral etching. The cantilever bending is discussed in terms of free surface energy, layer thickness and grain size.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2006.11.025