AlGaN/GaN MISHEMT with hBN as gate dielectric

Metal/Insulator/Semiconductor AlGaN/GaN High Electron Mobility Transistors (MISHEMTs) on sapphire substrate were fabricated with hexagonal Boron Nitride (hBN) thin film as gate dielectric. The hBN thin film, deposited by MW-PECVD, is an insulator permitting to obtain a low leakage current gate, an i...

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Bibliographic Details
Published in:Diamond and related materials 2009-05, Vol.18 (5), p.1039-1042
Main Authors: Gerbedoen, J.-C., Soltani, A., Mattalah, M., Moreau, M., Thevenin, P., De Jaeger, J.-C.
Format: Article
Language:English
Subjects:
Chemical Sciences
Gate dielectric
HBN thin film
HEMTs
Material chemistry
MISHEMTs
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Summary:Metal/Insulator/Semiconductor AlGaN/GaN High Electron Mobility Transistors (MISHEMTs) on sapphire substrate were fabricated with hexagonal Boron Nitride (hBN) thin film as gate dielectric. The hBN thin film, deposited by MW-PECVD, is an insulator permitting to obtain a low leakage current gate, an interface state density as low as 5 × 1011 cm − 2 eV − 1 for hBN/AlGaN interface and low roughness surface less than 0.4 nm. HBN thin film is deposited to have optical c-axis oriented weakly tilted to the perpendicular at the AlGaN barrier surface and to increase the lateral electrical resistivity. DC measurement on MISHEMT exhibits promising performance for microwave power devices associated to a good gate charge control in enhancement mode.
ISSN:0925-9635
1879-0062
DOI:10.1016/j.diamond.2009.02.018