1/f noise in metal-oxide-semiconductor transistors biased in weak inversionparameter extraction

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Bibliographic Details
Published in:Journal of applied physics 2001, Vol.89 (7), p.4192-4194
Main Authors: Rhayem, J., Rigaud, D., Eya'A, A., Valenza, M., Hoffmann, A.
Format: Article
Language:English
Subjects:
Electronics
Engineering Sciences
Online Access:Get full text
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ISSN:0021-8979
1089-7550
DOI:10.1063/1.1343517