Loading…
Admittance spectroscopy of cadmium free CIGS solar cells heterointerfaces
Cadmium free Cu(In,Ga)Se 2 (CIGS) solar cells, prepared with indium sulfide buffer layers In 2S 3 deposited by Atomic Layer Chemical Vapor Deposition, were investigated by admittance spectroscopy. The admittance spectroscopy performed on various solar cells with different deposition conditions of th...
Saved in:
| Published in: | Thin solid films 2006-07, Vol.511 (Complete), p.320-324 |
|---|---|
| Main Authors: | , , , , , , |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Citations: | Items that this one cites Items that cite this one |
| Online Access: | Get full text |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| cited_by | cdi_FETCH-LOGICAL-c428t-6d9341355afc522fb24422f43483c50a66d94ad7c68b5bc2d81b29685532f4b83 |
|---|---|
| cites | cdi_FETCH-LOGICAL-c428t-6d9341355afc522fb24422f43483c50a66d94ad7c68b5bc2d81b29685532f4b83 |
| container_end_page | 324 |
| container_issue | Complete |
| container_start_page | 320 |
| container_title | Thin solid films |
| container_volume | 511 |
| creator | Djebbour, Z. Darga, A. Migan Dubois, A. Mencaraglia, D. Naghavi, N. Guillemoles, J.-F. Lincot, D. |
| description | Cadmium free Cu(In,Ga)Se
2 (CIGS) solar cells, prepared with indium sulfide buffer layers In
2S
3 deposited by Atomic Layer Chemical Vapor Deposition, were investigated by admittance spectroscopy. The admittance spectroscopy performed on various solar cells with different deposition conditions of the In
2S
3 buffer layer reveals two types of defects: a shallow level N
1 and a deeper one N
2. The same situation is also found generally in CdS/CIGS based solar cells. For this latter kind of solar cells, it has been well established that the N
2-type defect is located in the CIGS bulk whereas the spatial location of the N
1-type defect is not well defined. To address this issue we performed admittance spectroscopy on CIGS based solar cells with In
2S
3 buffer layer and we compared these results with those obtained from CIGS solar cells with CdS buffer layer. From the Meyer–Neldel behaviour observed on the pre-exponential factor of defect emission frequencies, we can well derive the capture cross-sections of the different defects on both kinds of devices coated with In
2S
3 or CdS. More precisely, it was found that for both kinds of devices, the N
1-type defect has the same capture cross-section regardless of the dispersion of its activation energy. As a result we can assume that this defect is most likely located in the CIGS absorber layer next to the heterointerface. |
| doi_str_mv | 10.1016/j.tsf.2005.11.087 |
| format | article |
| fullrecord | <record><control><sourceid>proquest_hal_p</sourceid><recordid>TN_cdi_hal_primary_oai_HAL_hal_00321746v1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0040609005022959</els_id><sourcerecordid>27998788</sourcerecordid><originalsourceid>FETCH-LOGICAL-c428t-6d9341355afc522fb24422f43483c50a66d94ad7c68b5bc2d81b29685532f4b83</originalsourceid><addsrcrecordid>eNp9kE9LwzAYh4MoOKcfwFtPgofWN__aFE9j6BwMPKjnkKYJy2iXmXSDfXtTKh695IXk-f3I-yB0j6HAgMunXTFEWxAAXmBcgKgu0AyLqs5JRfElmgEwyEuo4RrdxLgDAEwInaH1ou3dMKi9Nlk8GD0EH7U_nDNvM63S27HPbDAmW65XH1n0nQqZNl0Xs60ZTPBun06rtIm36MqqLpq73zlHX68vn8u3fPO-Wi8Xm1wzIoa8bGvKMOVcWc0JsQ1hLA1GmaCagyoTwFRb6VI0vNGkFbghdSk4p4lqBJ2jx6l3qzp5CK5X4Sy9cvJtsZHjHQAluGLlCSf2YWIPwX8fTRxk7-L4fbU3_hglqepaVGIsxROo0_4xGPvXjEGOguVOJsFyFCwxlklwyjxPGZO2PTkTZNTOJJGtC0mkbL37J_0Du0iCFQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>27998788</pqid></control><display><type>article</type><title>Admittance spectroscopy of cadmium free CIGS solar cells heterointerfaces</title><source>ScienceDirect Freedom Collection</source><creator>Djebbour, Z. ; Darga, A. ; Migan Dubois, A. ; Mencaraglia, D. ; Naghavi, N. ; Guillemoles, J.-F. ; Lincot, D.</creator><creatorcontrib>Djebbour, Z. ; Darga, A. ; Migan Dubois, A. ; Mencaraglia, D. ; Naghavi, N. ; Guillemoles, J.-F. ; Lincot, D.</creatorcontrib><description>Cadmium free Cu(In,Ga)Se
2 (CIGS) solar cells, prepared with indium sulfide buffer layers In
2S
3 deposited by Atomic Layer Chemical Vapor Deposition, were investigated by admittance spectroscopy. The admittance spectroscopy performed on various solar cells with different deposition conditions of the In
2S
3 buffer layer reveals two types of defects: a shallow level N
1 and a deeper one N
2. The same situation is also found generally in CdS/CIGS based solar cells. For this latter kind of solar cells, it has been well established that the N
2-type defect is located in the CIGS bulk whereas the spatial location of the N
1-type defect is not well defined. To address this issue we performed admittance spectroscopy on CIGS based solar cells with In
2S
3 buffer layer and we compared these results with those obtained from CIGS solar cells with CdS buffer layer. From the Meyer–Neldel behaviour observed on the pre-exponential factor of defect emission frequencies, we can well derive the capture cross-sections of the different defects on both kinds of devices coated with In
2S
3 or CdS. More precisely, it was found that for both kinds of devices, the N
1-type defect has the same capture cross-section regardless of the dispersion of its activation energy. As a result we can assume that this defect is most likely located in the CIGS absorber layer next to the heterointerface.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/j.tsf.2005.11.087</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Admittance spectroscopy ; CdS free ; CIGS ; In 2S 3 ; Meyer–Neldel rule</subject><ispartof>Thin solid films, 2006-07, Vol.511 (Complete), p.320-324</ispartof><rights>2005 Elsevier B.V.</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c428t-6d9341355afc522fb24422f43483c50a66d94ad7c68b5bc2d81b29685532f4b83</citedby><cites>FETCH-LOGICAL-c428t-6d9341355afc522fb24422f43483c50a66d94ad7c68b5bc2d81b29685532f4b83</cites><orcidid>0000-0001-7107-2341 ; 0000-0003-0114-8624 ; 0000-0002-6045-5096</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,315,783,787,888,27937,27938</link.rule.ids><backlink>$$Uhttps://centralesupelec.hal.science/hal-00321746$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Djebbour, Z.</creatorcontrib><creatorcontrib>Darga, A.</creatorcontrib><creatorcontrib>Migan Dubois, A.</creatorcontrib><creatorcontrib>Mencaraglia, D.</creatorcontrib><creatorcontrib>Naghavi, N.</creatorcontrib><creatorcontrib>Guillemoles, J.-F.</creatorcontrib><creatorcontrib>Lincot, D.</creatorcontrib><title>Admittance spectroscopy of cadmium free CIGS solar cells heterointerfaces</title><title>Thin solid films</title><description>Cadmium free Cu(In,Ga)Se
2 (CIGS) solar cells, prepared with indium sulfide buffer layers In
2S
3 deposited by Atomic Layer Chemical Vapor Deposition, were investigated by admittance spectroscopy. The admittance spectroscopy performed on various solar cells with different deposition conditions of the In
2S
3 buffer layer reveals two types of defects: a shallow level N
1 and a deeper one N
2. The same situation is also found generally in CdS/CIGS based solar cells. For this latter kind of solar cells, it has been well established that the N
2-type defect is located in the CIGS bulk whereas the spatial location of the N
1-type defect is not well defined. To address this issue we performed admittance spectroscopy on CIGS based solar cells with In
2S
3 buffer layer and we compared these results with those obtained from CIGS solar cells with CdS buffer layer. From the Meyer–Neldel behaviour observed on the pre-exponential factor of defect emission frequencies, we can well derive the capture cross-sections of the different defects on both kinds of devices coated with In
2S
3 or CdS. More precisely, it was found that for both kinds of devices, the N
1-type defect has the same capture cross-section regardless of the dispersion of its activation energy. As a result we can assume that this defect is most likely located in the CIGS absorber layer next to the heterointerface.</description><subject>Admittance spectroscopy</subject><subject>CdS free</subject><subject>CIGS</subject><subject>In 2S 3</subject><subject>Meyer–Neldel rule</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNp9kE9LwzAYh4MoOKcfwFtPgofWN__aFE9j6BwMPKjnkKYJy2iXmXSDfXtTKh695IXk-f3I-yB0j6HAgMunXTFEWxAAXmBcgKgu0AyLqs5JRfElmgEwyEuo4RrdxLgDAEwInaH1ou3dMKi9Nlk8GD0EH7U_nDNvM63S27HPbDAmW65XH1n0nQqZNl0Xs60ZTPBun06rtIm36MqqLpq73zlHX68vn8u3fPO-Wi8Xm1wzIoa8bGvKMOVcWc0JsQ1hLA1GmaCagyoTwFRb6VI0vNGkFbghdSk4p4lqBJ2jx6l3qzp5CK5X4Sy9cvJtsZHjHQAluGLlCSf2YWIPwX8fTRxk7-L4fbU3_hglqepaVGIsxROo0_4xGPvXjEGOguVOJsFyFCwxlklwyjxPGZO2PTkTZNTOJJGtC0mkbL37J_0Du0iCFQ</recordid><startdate>20060726</startdate><enddate>20060726</enddate><creator>Djebbour, Z.</creator><creator>Darga, A.</creator><creator>Migan Dubois, A.</creator><creator>Mencaraglia, D.</creator><creator>Naghavi, N.</creator><creator>Guillemoles, J.-F.</creator><creator>Lincot, D.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8BQ</scope><scope>8FD</scope><scope>FR3</scope><scope>JG9</scope><scope>KR7</scope><scope>L7M</scope><scope>1XC</scope><orcidid>https://orcid.org/0000-0001-7107-2341</orcidid><orcidid>https://orcid.org/0000-0003-0114-8624</orcidid><orcidid>https://orcid.org/0000-0002-6045-5096</orcidid></search><sort><creationdate>20060726</creationdate><title>Admittance spectroscopy of cadmium free CIGS solar cells heterointerfaces</title><author>Djebbour, Z. ; Darga, A. ; Migan Dubois, A. ; Mencaraglia, D. ; Naghavi, N. ; Guillemoles, J.-F. ; Lincot, D.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c428t-6d9341355afc522fb24422f43483c50a66d94ad7c68b5bc2d81b29685532f4b83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Admittance spectroscopy</topic><topic>CdS free</topic><topic>CIGS</topic><topic>In 2S 3</topic><topic>Meyer–Neldel rule</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Djebbour, Z.</creatorcontrib><creatorcontrib>Darga, A.</creatorcontrib><creatorcontrib>Migan Dubois, A.</creatorcontrib><creatorcontrib>Mencaraglia, D.</creatorcontrib><creatorcontrib>Naghavi, N.</creatorcontrib><creatorcontrib>Guillemoles, J.-F.</creatorcontrib><creatorcontrib>Lincot, D.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><collection>Civil Engineering Abstracts</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Djebbour, Z.</au><au>Darga, A.</au><au>Migan Dubois, A.</au><au>Mencaraglia, D.</au><au>Naghavi, N.</au><au>Guillemoles, J.-F.</au><au>Lincot, D.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Admittance spectroscopy of cadmium free CIGS solar cells heterointerfaces</atitle><jtitle>Thin solid films</jtitle><date>2006-07-26</date><risdate>2006</risdate><volume>511</volume><issue>Complete</issue><spage>320</spage><epage>324</epage><pages>320-324</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><abstract>Cadmium free Cu(In,Ga)Se
2 (CIGS) solar cells, prepared with indium sulfide buffer layers In
2S
3 deposited by Atomic Layer Chemical Vapor Deposition, were investigated by admittance spectroscopy. The admittance spectroscopy performed on various solar cells with different deposition conditions of the In
2S
3 buffer layer reveals two types of defects: a shallow level N
1 and a deeper one N
2. The same situation is also found generally in CdS/CIGS based solar cells. For this latter kind of solar cells, it has been well established that the N
2-type defect is located in the CIGS bulk whereas the spatial location of the N
1-type defect is not well defined. To address this issue we performed admittance spectroscopy on CIGS based solar cells with In
2S
3 buffer layer and we compared these results with those obtained from CIGS solar cells with CdS buffer layer. From the Meyer–Neldel behaviour observed on the pre-exponential factor of defect emission frequencies, we can well derive the capture cross-sections of the different defects on both kinds of devices coated with In
2S
3 or CdS. More precisely, it was found that for both kinds of devices, the N
1-type defect has the same capture cross-section regardless of the dispersion of its activation energy. As a result we can assume that this defect is most likely located in the CIGS absorber layer next to the heterointerface.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.tsf.2005.11.087</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0001-7107-2341</orcidid><orcidid>https://orcid.org/0000-0003-0114-8624</orcidid><orcidid>https://orcid.org/0000-0002-6045-5096</orcidid></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0040-6090 |
| ispartof | Thin solid films, 2006-07, Vol.511 (Complete), p.320-324 |
| issn | 0040-6090 1879-2731 |
| language | eng |
| recordid | cdi_hal_primary_oai_HAL_hal_00321746v1 |
| source | ScienceDirect Freedom Collection |
| subjects | Admittance spectroscopy CdS free CIGS In 2S 3 Meyer–Neldel rule |
| title | Admittance spectroscopy of cadmium free CIGS solar cells heterointerfaces |
| url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-11-10T22%3A57%3A39IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_hal_p&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Admittance%20spectroscopy%20of%20cadmium%20free%20CIGS%20solar%20cells%20heterointerfaces&rft.jtitle=Thin%20solid%20films&rft.au=Djebbour,%20Z.&rft.date=2006-07-26&rft.volume=511&rft.issue=Complete&rft.spage=320&rft.epage=324&rft.pages=320-324&rft.issn=0040-6090&rft.eissn=1879-2731&rft_id=info:doi/10.1016/j.tsf.2005.11.087&rft_dat=%3Cproquest_hal_p%3E27998788%3C/proquest_hal_p%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c428t-6d9341355afc522fb24422f43483c50a66d94ad7c68b5bc2d81b29685532f4b83%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=27998788&rft_id=info:pmid/&rfr_iscdi=true |