Injection and selfconsistent charge transport in bulk insulators

The new flight-drift model (FDM) of selfconsistent electron transport and electrical charge storage in wide-gap insulators reflects a more realistic simulation of these processes in dielectric and insulating materials than the former mainly ballistic model. Thus, electron-hole creation, their ballis...

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Bibliographic Details
Published in:Journal of the European Ceramic Society 2007, Vol.27 (13), p.3977-3982
Main Authors: Fitting, H.-J., Cornet, N., Touzin, M., Goeuriot, D., Guerret-Piécourt, C., Tréheux, D.
Format: Article
Language:English
Subjects:
Al 2O 3
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Dielectric properties
Electrical conductivity
Electronic transport in condensed matter
Engineering Sciences
Exact sciences and technology
Insulators
Materials
Physics
Theory of electronic transport
scattering mechanisms
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Summary:The new flight-drift model (FDM) of selfconsistent electron transport and electrical charge storage in wide-gap insulators reflects a more realistic simulation of these processes in dielectric and insulating materials than the former mainly ballistic model. Thus, electron-hole creation, their ballistic flight, followed by field-drift transport, and finally trapping in localized states and/or recombination are taken into account. The experimentally accessable quantities of field assisted secondary electron emission σ as well as the resulting surface potential V 0 due to internal current j ( x , t ) , charge ρ ( x , t ) , field F ( x , t ) , and potential V ( x , t ) distributions are obtained. The calculations are performed for bulk Al 2O 3 ceramics with open and metal-coated and grounded surfaces.
ISSN:0955-2219
1873-619X
DOI:10.1016/j.jeurceramsoc.2007.02.078