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Gallium nitride bulk crystal growth processes: A review
Optoelectrical and microelectronic devices involving gallium nitride have become a challenge but their development is limited because of a lack of suitable substrates. This paper deals with the crystal growth of gallium nitride, the processes leading to GaN bulk crystals being significantly expanded...
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Published in: | Materials science & engineering. R, Reports : a review journal Reports : a review journal, 2006, Vol.50 (6), p.167-194 |
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container_issue | 6 |
container_start_page | 167 |
container_title | Materials science & engineering. R, Reports : a review journal |
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creator | Denis, Annaïg Goglio, Graziella Demazeau, Gérard |
description | Optoelectrical and microelectronic devices involving gallium nitride have become a challenge but their development is limited because of a lack of suitable substrates. This paper deals with the crystal growth of gallium nitride, the processes leading to GaN bulk crystals being significantly expanded during the last decade (the ones involving GaN thin films or nanocrystallites are not studied in this review). The main reviewed routes are: (i) the high pressure nitrogen solution growth (H.P.N.S.G.), (ii) the Na flux method, and (iii) the ammonothermal crystal growth. |
doi_str_mv | 10.1016/j.mser.2005.11.001 |
format | article |
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subjects | Chemical Sciences Crystal growth Functional materials GaN Material chemistry Nitrides |
title | Gallium nitride bulk crystal growth processes: A review |
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