Gallium nitride bulk crystal growth processes: A review

Optoelectrical and microelectronic devices involving gallium nitride have become a challenge but their development is limited because of a lack of suitable substrates. This paper deals with the crystal growth of gallium nitride, the processes leading to GaN bulk crystals being significantly expanded...

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Bibliographic Details
Published in:Materials science & engineering. R, Reports : a review journal Reports : a review journal, 2006, Vol.50 (6), p.167-194
Main Authors: Denis, Annaïg, Goglio, Graziella, Demazeau, Gérard
Format: Article
Language:English
Subjects:
Chemical Sciences
Crystal growth
Functional materials
GaN
Material chemistry
Nitrides
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Summary:Optoelectrical and microelectronic devices involving gallium nitride have become a challenge but their development is limited because of a lack of suitable substrates. This paper deals with the crystal growth of gallium nitride, the processes leading to GaN bulk crystals being significantly expanded during the last decade (the ones involving GaN thin films or nanocrystallites are not studied in this review). The main reviewed routes are: (i) the high pressure nitrogen solution growth (H.P.N.S.G.), (ii) the Na flux method, and (iii) the ammonothermal crystal growth.
ISSN:0927-796X
1879-212X
DOI:10.1016/j.mser.2005.11.001