Hydrogen implantation-induced blistering in diamond : towards diamond layer transfer by the Smart CutTM technique

The effect of H$^+$ implantation and annealing of diamond (100) monocrystalline substrates has been studied by ToFSIMS,cathodoluminescence, transmission spectroscopy and TEM. Blistering conditions suitable for the Smart Cut$^{TM}$technology have been identified in monocrystalline diamond, using two...

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Bibliographic Details
Published in:Diamond and related materials 2022, Vol.126
Main Authors: Masante, Cédric, de Vecchy, Jon, Mazen, Frédéric, Milesi, Frederic, Di Cioccio, Léa, Pernot, Julien, Lloret, Fernando, Araujo, Daniel, Pinero, José Carlos, Rochat, Névine, Pierre, Francois, Servant, Florence, Widiez, Julie
Format: Article
Language:English
Subjects:
Chemical Sciences
Electronics
Engineering Sciences
Material chemistry
Micro and nanotechnologies
Microelectronics
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Summary:The effect of H$^+$ implantation and annealing of diamond (100) monocrystalline substrates has been studied by ToFSIMS,cathodoluminescence, transmission spectroscopy and TEM. Blistering conditions suitable for the Smart Cut$^{TM}$technology have been identified in monocrystalline diamond, using two sets of hydrogen implantation and annealing.A first hydrogen implantation followed by a first annealing leads to amorphization of a buried layer without hydrogenexodiffusion. Blisters and exfoliations appear at the surface of the diamond samples after a second hydrogen implantationinside the pre-amorphized diamond layer and a final annealing, as evidenced by TEM and optical microscopy.Demonstration of hydrogen-induced blistering is a major step to adapt the Smart Cut$^{TM}$ process on diamond material.This process is compatible with wafer bonding before the second annealing and therefore open the way for thin diamondlayer transfer, still not achieved to date.
ISSN:0925-9635
DOI:10.1016/j.diamond.2022.109085