Measurement of Thermal Stress by X-ray Nano-Diffraction in -Oriented Nanotwinned Cu Bumps for Cu/SiO[sub.2] Hybrid Joints

X-ray nanodiffraction was used to measure the thermal stress of 10 µm nanotwinned Cu bumps in Cu/SiO[sub.2] hybrid structures at −55 °C, 27 °C, 100 °C, 150 °C, and 200 °C. Bonding can be achieved without externally applied compression. The X-ray beam size is about 100 nm in diameter. The Cu bump is...

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Bibliographic Details
Published in:Nanomaterials (Basel, Switzerland) Switzerland), 2023-08, Vol.13 (17)
Main Authors: Hsu, Wei-You, Yang, Shih-Chi, Lin, You-Yi, Hsieh, Wan-Zhen, Tu, King-Ning, Chiu, Wei-Lan, Chang, Hsiang-Hung, Chiang, Ching-Yu, Chen, Chih
Format: Article
Language:English
Subjects:
Copper
Diffraction
Mechanical properties
Nanoparticles
Silica
Structure
Thermal properties
X-rays
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Summary:X-ray nanodiffraction was used to measure the thermal stress of 10 µm nanotwinned Cu bumps in Cu/SiO[sub.2] hybrid structures at −55 °C, 27 °C, 100 °C, 150 °C, and 200 °C. Bonding can be achieved without externally applied compression. The X-ray beam size is about 100 nm in diameter. The Cu bump is dominated by (111) oriented nano-twins. Before the hybrid bonding, the thermal stress in Cu bumps is compressive and remains compressive after bonding. The average stress in the bonded Cu joint at 200 °C is as large as −169.1 MPa. In addition, using the strain data measured at various temperatures, one can calculate the effective thermal expansion coefficient (CTE) for the 10 µm Cu bumps confined by the SiO[sub.2] dielectrics. This study reports a useful approach on measuring the strain and stress in oriented metal bumps confined by SiO[sub.2] dielectrics. The results also provide a deeper understanding on the mechanism of hybrid bonding without externally applied compression.
ISSN:2079-4991
2079-4991
DOI:10.3390/nano13172448