Fabrication of Ga[sub.2]O[sub.3] Schottky Barrier Diode and Heterojunction Diode by MOCVD

In this article, we reported on a Ga[sub.2]O[sub.3]-based Schottky barrier diode and heterojunction diode from MOCVD. The Si-doped n-type Ga[sub.2]O[sub.3] drift layer, grown by MOCVD, exhibited high crystal quality, flat surfaces, and uniform doping. The distribution of unintentional impurities in...

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Bibliographic Details
Published in:	Materials 2022-11, Vol.15 (23)
Main Authors:	Jiao, Teng, Chen, Wei, Li, Zhengda, Diao, Zhaoti, Dang, Xinming, Chen, Peiran, Dong, Xin, Zhang, Yuantao, Zhang, Baolin
Format:	Article
Language:	eng
Subjects:	Chemical vapor deposition
Online Access:	Get full text
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Summary:	In this article, we reported on a Ga[sub.2]O[sub.3]-based Schottky barrier diode and heterojunction diode from MOCVD. The Si-doped n-type Ga[sub.2]O[sub.3] drift layer, grown by MOCVD, exhibited high crystal quality, flat surfaces, and uniform doping. The distribution of unintentional impurities in the films was studied. Then nickel Schottky barrier diode and p-NiO/n-Ga[sub.2]O[sub.3] heterojunction diode were fabricated and measured. Without any electric field management structure, the Schottky barrier diode and heterojunction diode have specific resistances of 3.0 mΩ·cm[sup.2] and 6.2 mΩ·cm[sup.2], breakdown voltages of 380 V and 740 V, thus yielding power figures of merit of 48 MW·cm[sup.−2] and 88 MW·cm[sup.−2], respectively. Besides, both devices exhibit a current on/off ratio of more than 10[sup.10]. This shows the prospect of MOCVD in power device manufacture.
ISSN:	1996-1944 1996-1944