High Performance of InGaZnO TFTs Using Hf[sub.x]Al[sub.y]O[sub.z] Nanolaminates as Gate Insulators Prepared by ALD

In this study, Hf[sub.x]Al[sub.y]O[sub.z] nanolaminate, single-layer Al[sub.2]O[sub.3], and HfO[sub.2] gate insulators were fabricated by atomic layer deposition (ALD) to successfully integrate the InGaZnO (IGZO) thin-film transistors (TFTs). Compared with single-layer HfO[sub.2]-based TFTs, the Hf[...

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Bibliographic Details
Published in:Coatings (Basel) 2022-11, Vol.12 (12)
Main Authors: Huang, Chuanxin, Liu, Yunyun, Ma, Dianguo, Guo, Zhongkai, Yao, Haiyun, Lv, Kaikai, Tian, Zhongjun, Liang, Lanju, Gao, Ju, Ding, Xingwei
Format: Article
Language:English
Subjects:
Flat panel displays
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Summary:In this study, Hf[sub.x]Al[sub.y]O[sub.z] nanolaminate, single-layer Al[sub.2]O[sub.3], and HfO[sub.2] gate insulators were fabricated by atomic layer deposition (ALD) to successfully integrate the InGaZnO (IGZO) thin-film transistors (TFTs). Compared with single-layer HfO[sub.2]-based TFTs, the Hf[sub.x]Al[sub.y]O[sub.z]-based IGZO TFTs showed a larger field-effect mobility of 10.31 cm[sup.2]/Vs and a smaller subthreshold swing of 0.12 V/decade. Moreover, it showed a smaller threshold voltage shift of 0.5 V than that of HfO[sub.2]-based TFTs under gate-bias stress at +5 V for 900 s due to the smooth surface. Moreover, the high dielectric Hf[sub.x]Al[sub.y]O[sub.z] nanolaminate had a larger equivalent SiO[sub.2] thinness than that of Al[sub.2]O[sub.3] gate insulators, which are beneficial in applications of high-resolution display. Thus, the high mobility and high stability TFTs could be regarded as good candidates for active-matrix flat panel displays.
ISSN:2079-6412
2079-6412
DOI:10.3390/coatings12121811