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Measurement of the Height of Nanorelief Elements by the Method of Three-Dimensional Reconstruction in a Scanning Electron Microscope
Comparative measurements of the height of the nanorelief steps of the surface of a silicon wafer by methods of three-dimensional reconstruction using a scanning electron microscope and profilometry were carried out. To realize the method of three-dimensional reconstruction, an islet gold film is for...
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Published in: | Measurement techniques 2017-06, Vol.60 (3), p.220-225 |
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Main Authors: | , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites |
Online Access: | Get full text |
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Summary: | Comparative measurements of the height of the nanorelief steps of the surface of a silicon wafer by methods of three-dimensional reconstruction using a scanning electron microscope and profilometry were carried out. To realize the method of three-dimensional reconstruction, an islet gold film is formed on the surface of the test sample. The AlphaStep D-600 profiler is calibrated with a KTS-4500 QS step height gauge. The coincidence of the results of measurements with the methods of three-dimensional reconstruction and profilometry is established. The possibilities of reducing the uncertainty of the measurement results by the method of three-dimensional reconstruction were analyzed. |
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ISSN: | 0543-1972 1573-8906 |
DOI: | 10.1007/s11018-017-1177-4 |