Formation of silicon nanocrystals in multilayer nanoperiodic a-Si[O.sub.x]/insulator structures from the results of synchrotron investigations

The problem of the efficiency of the controllable formation of arrays of silicon nanoparticles is studied on the basis of detailed investigations of the electronic structure of multilayer nanoperiodic a-Si[O.sub.x]/Si[O.sub.2], a-Si[O.sub.x]/[Al.sub.2][O.sub.3], and a-Si[O.sub.x]/Zr[O.sub.2] compoun...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2017-03, Vol.51 (3), p.349
Main Authors: Turishchev, S. Yu, Terekhov, V.A, Koyuda, D.A, Ershov, A.V, Mashin, A.I, Parinova, E.V, Nesterov, D.N, Grachev, D.A, Karabanova, I.A, Domashevskaya, E.P
Format: Article
Language:English
Subjects:
Annealing
Dielectric materials
Investigations
Silicon
Online Access:Get full text
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Summary:The problem of the efficiency of the controllable formation of arrays of silicon nanoparticles is studied on the basis of detailed investigations of the electronic structure of multilayer nanoperiodic a-Si[O.sub.x]/Si[O.sub.2], a-Si[O.sub.x]/[Al.sub.2][O.sub.3], and a-Si[O.sub.x]/Zr[O.sub.2] compounds. Using synchrotron radiation and the X-ray absorption near edge structure (XANES) spectroscopy technique, a modification is revealed for the investigated structures under the effect of high-temperature annealing at the highest temperature of 1100[degrees]C; this modification is attributed to the formation of silicon nanocrystals in the layers of photoluminescent multilayer structures. DOI: 10.1134/S1063782617030241
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782617030241