Investigation of the fabrication processes of AlGaN/AlN/GaN HEMTs with in situ [Si.sub.3][N.sub.4] passivation

The optimum mode of the in situ plasma-chemical etching of a [Si.sub.3][N.sub.4] passivating layer in [C.sub.3][F.sub.8]/[O.sub.2] medium is chosen for the case of fabricating AlGaN/AlN/GaN HEMTs. It is found that a bias of 40-50 V at a high-frequency electrode provides anisotropic etching of the in...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2016-10, Vol.50 (10), p.1416
Main Authors: Tomosh, K.N, Pavlov, A.Yu, Pavlov, V.Yu, Khabibullin, R.A, Arutyunyan, S.S, Maltsev, P.P
Format: Article
Language:English
Subjects:
Anisotropy
Investigations
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Summary:The optimum mode of the in situ plasma-chemical etching of a [Si.sub.3][N.sub.4] passivating layer in [C.sub.3][F.sub.8]/[O.sub.2] medium is chosen for the case of fabricating AlGaN/AlN/GaN HEMTs. It is found that a bias of 40-50 V at a high-frequency electrode provides anisotropic etching of the insulator through a resist mask and introduces no appreciable radiation-induced defects upon overetching of the insulator films in the region of gate-metallization formation. To estimate the effect of in situ [Si.sub.3][N.sub.4] growth together with the heterostructure in one process on the AlGaN/AlN/GaN HEMT characteristics, transistors with gates without the insulator and with gates through [Si.sub.3][N.sub.4] slits are fabricated. The highest drain current of the AlGaN/AlN/GaN HEMT at 0 V at the gate is shown to be 1.5 times higher in the presence of [Si.sub.3][N.sub.4] than without it. DOI: 10.1134/S1063782616100225
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782616100225