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Optical and electrical properties of GaN: Si-based microstructures with a wide range of doping levels
The optical and electrical properties of silicon-doped epitaxial gallium nitride layers grown on sapphire have been studied. The studies have been performed over a wide range of silicon concentrations on each side of the Mott transition. The critical concentrations of Si atoms corresponding to the f...
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| Published in: | Physics of the solid state 2015-04, Vol.57 (4), p.787-793 |
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| Main Authors: | , , , , , , , , , , , |
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| container_end_page | 793 |
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| container_title | Physics of the solid state |
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| creator | Agekyan, V. F. Borisov, E. V. Vorobjev, L. E. Melentyev, G. A. Nykänen, H. Riuttanen, L. Serov, A. Yu Suihkonen, S. Svensk, O. Filisofov, N. G. Shalygin, V. A. Shelukhin, L. A. |
| description | The optical and electrical properties of silicon-doped epitaxial gallium nitride layers grown on sapphire have been studied. The studies have been performed over a wide range of silicon concentrations on each side of the Mott transition. The critical concentrations of Si atoms corresponding to the formation of an impurity band in gallium nitride (∼2.5 × 10
18
cm
−3
) and to the overlap of the impurity band with the conduction band (∼2 × 10
19
cm
−3
) have been refined. The maximum of the photoluminescence spectrum shifts nonmonotonically with increasing doping level. This shift is determined by two factors: (1) an increase in the exchange interaction leading to a decrease in the energy gap width and (2) a change in the radiation mechanism as the donor concentration increases. The temperature dependence of the exciton luminescence with participating optical phonons has been studied. The energies of phonon-plasmon modes in GaN: Si layers with different silicon concentrations have been measured using Raman spectroscopy. |
| doi_str_mv | 10.1134/S1063783415040046 |
| format | article |
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18
cm
−3
) and to the overlap of the impurity band with the conduction band (∼2 × 10
19
cm
−3
) have been refined. The maximum of the photoluminescence spectrum shifts nonmonotonically with increasing doping level. This shift is determined by two factors: (1) an increase in the exchange interaction leading to a decrease in the energy gap width and (2) a change in the radiation mechanism as the donor concentration increases. The temperature dependence of the exciton luminescence with participating optical phonons has been studied. The energies of phonon-plasmon modes in GaN: Si layers with different silicon concentrations have been measured using Raman spectroscopy.</description><identifier>ISSN: 1063-7834</identifier><identifier>EISSN: 1090-6460</identifier><identifier>DOI: 10.1134/S1063783415040046</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Analysis ; Electric properties ; Epitaxy ; Gallium nitrate ; Liquors ; Optical Properties ; Photoluminescence ; Physics ; Physics and Astronomy ; Raman spectroscopy ; Silicon ; Solid State Physics</subject><ispartof>Physics of the solid state, 2015-04, Vol.57 (4), p.787-793</ispartof><rights>Pleiades Publishing, Ltd. 2015</rights><rights>COPYRIGHT 2015 Springer</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c361t-335b8e1c023b1ce5a8578fc7434b1c67d0c2f2a0ac4d3fa80aaa80b4bd536ac13</citedby><cites>FETCH-LOGICAL-c361t-335b8e1c023b1ce5a8578fc7434b1c67d0c2f2a0ac4d3fa80aaa80b4bd536ac13</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,786,790,27957,27958</link.rule.ids></links><search><creatorcontrib>Agekyan, V. F.</creatorcontrib><creatorcontrib>Borisov, E. V.</creatorcontrib><creatorcontrib>Vorobjev, L. E.</creatorcontrib><creatorcontrib>Melentyev, G. A.</creatorcontrib><creatorcontrib>Nykänen, H.</creatorcontrib><creatorcontrib>Riuttanen, L.</creatorcontrib><creatorcontrib>Serov, A. Yu</creatorcontrib><creatorcontrib>Suihkonen, S.</creatorcontrib><creatorcontrib>Svensk, O.</creatorcontrib><creatorcontrib>Filisofov, N. G.</creatorcontrib><creatorcontrib>Shalygin, V. A.</creatorcontrib><creatorcontrib>Shelukhin, L. A.</creatorcontrib><title>Optical and electrical properties of GaN: Si-based microstructures with a wide range of doping levels</title><title>Physics of the solid state</title><addtitle>Phys. Solid State</addtitle><description>The optical and electrical properties of silicon-doped epitaxial gallium nitride layers grown on sapphire have been studied. The studies have been performed over a wide range of silicon concentrations on each side of the Mott transition. The critical concentrations of Si atoms corresponding to the formation of an impurity band in gallium nitride (∼2.5 × 10
18
cm
−3
) and to the overlap of the impurity band with the conduction band (∼2 × 10
19
cm
−3
) have been refined. The maximum of the photoluminescence spectrum shifts nonmonotonically with increasing doping level. This shift is determined by two factors: (1) an increase in the exchange interaction leading to a decrease in the energy gap width and (2) a change in the radiation mechanism as the donor concentration increases. The temperature dependence of the exciton luminescence with participating optical phonons has been studied. The energies of phonon-plasmon modes in GaN: Si layers with different silicon concentrations have been measured using Raman spectroscopy.</description><subject>Analysis</subject><subject>Electric properties</subject><subject>Epitaxy</subject><subject>Gallium nitrate</subject><subject>Liquors</subject><subject>Optical Properties</subject><subject>Photoluminescence</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Raman spectroscopy</subject><subject>Silicon</subject><subject>Solid State Physics</subject><issn>1063-7834</issn><issn>1090-6460</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNp9kd9LwzAQx4MoOKd_gG959aEzadKs820MnYPhwOlzuabXmtG1JUn98d-bOl-GIIG7XPL9hMv3CLnmbMK5kLdbzpSYpkLyhEnGpDohI85mLFJSsdNhr0Q03J-TC-d2jHHOk9mI4KbzRkNNoSko1qi9_Sk723ZovUFH25Iu4emObk2Ug8OC7o22rfO21763QfBh_BuFkAqkFpoKB6RoO9NUtMZ3rN0lOSuhdnj1m8fk9eH-ZfEYrTfL1WK-jrRQ3EdCJHmKXLNY5FxjAmkyTUs9lUKGWk0LpuMyBgZaFqKElAGEkMu8SIQCzcWYTA7vVlBjZpqy9RZ0WAWGptsGSxPO5zIJpsyYUgG4OQKCxuOnr6B3Llttn4-1_KAdfu8slllnzR7sV8ZZNgwh-zOEwMQHxgVtcMZmu7a3TfDgH-gbTiOIvw</recordid><startdate>20150401</startdate><enddate>20150401</enddate><creator>Agekyan, V. F.</creator><creator>Borisov, E. V.</creator><creator>Vorobjev, L. E.</creator><creator>Melentyev, G. A.</creator><creator>Nykänen, H.</creator><creator>Riuttanen, L.</creator><creator>Serov, A. Yu</creator><creator>Suihkonen, S.</creator><creator>Svensk, O.</creator><creator>Filisofov, N. G.</creator><creator>Shalygin, V. A.</creator><creator>Shelukhin, L. A.</creator><general>Pleiades Publishing</general><general>Springer</general><scope>AAYXX</scope><scope>CITATION</scope><scope>ISR</scope></search><sort><creationdate>20150401</creationdate><title>Optical and electrical properties of GaN: Si-based microstructures with a wide range of doping levels</title><author>Agekyan, V. F. ; Borisov, E. V. ; Vorobjev, L. E. ; Melentyev, G. A. ; Nykänen, H. ; Riuttanen, L. ; Serov, A. Yu ; Suihkonen, S. ; Svensk, O. ; Filisofov, N. G. ; Shalygin, V. A. ; Shelukhin, L. 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A.</creatorcontrib><creatorcontrib>Nykänen, H.</creatorcontrib><creatorcontrib>Riuttanen, L.</creatorcontrib><creatorcontrib>Serov, A. Yu</creatorcontrib><creatorcontrib>Suihkonen, S.</creatorcontrib><creatorcontrib>Svensk, O.</creatorcontrib><creatorcontrib>Filisofov, N. G.</creatorcontrib><creatorcontrib>Shalygin, V. A.</creatorcontrib><creatorcontrib>Shelukhin, L. A.</creatorcontrib><collection>CrossRef</collection><collection>Gale In Context: Science</collection><jtitle>Physics of the solid state</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Agekyan, V. F.</au><au>Borisov, E. V.</au><au>Vorobjev, L. E.</au><au>Melentyev, G. A.</au><au>Nykänen, H.</au><au>Riuttanen, L.</au><au>Serov, A. Yu</au><au>Suihkonen, S.</au><au>Svensk, O.</au><au>Filisofov, N. G.</au><au>Shalygin, V. A.</au><au>Shelukhin, L. A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Optical and electrical properties of GaN: Si-based microstructures with a wide range of doping levels</atitle><jtitle>Physics of the solid state</jtitle><stitle>Phys. Solid State</stitle><date>2015-04-01</date><risdate>2015</risdate><volume>57</volume><issue>4</issue><spage>787</spage><epage>793</epage><pages>787-793</pages><issn>1063-7834</issn><eissn>1090-6460</eissn><abstract>The optical and electrical properties of silicon-doped epitaxial gallium nitride layers grown on sapphire have been studied. The studies have been performed over a wide range of silicon concentrations on each side of the Mott transition. The critical concentrations of Si atoms corresponding to the formation of an impurity band in gallium nitride (∼2.5 × 10
18
cm
−3
) and to the overlap of the impurity band with the conduction band (∼2 × 10
19
cm
−3
) have been refined. The maximum of the photoluminescence spectrum shifts nonmonotonically with increasing doping level. This shift is determined by two factors: (1) an increase in the exchange interaction leading to a decrease in the energy gap width and (2) a change in the radiation mechanism as the donor concentration increases. The temperature dependence of the exciton luminescence with participating optical phonons has been studied. The energies of phonon-plasmon modes in GaN: Si layers with different silicon concentrations have been measured using Raman spectroscopy.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063783415040046</doi><tpages>7</tpages></addata></record> |
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| subjects | Analysis Electric properties Epitaxy Gallium nitrate Liquors Optical Properties Photoluminescence Physics Physics and Astronomy Raman spectroscopy Silicon Solid State Physics |
| title | Optical and electrical properties of GaN: Si-based microstructures with a wide range of doping levels |
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