Optical and electrical properties of GaN: Si-based microstructures with a wide range of doping levels

The optical and electrical properties of silicon-doped epitaxial gallium nitride layers grown on sapphire have been studied. The studies have been performed over a wide range of silicon concentrations on each side of the Mott transition. The critical concentrations of Si atoms corresponding to the f...

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Bibliographic Details
Published in:Physics of the solid state 2015-04, Vol.57 (4), p.787-793
Main Authors: Agekyan, V. F., Borisov, E. V., Vorobjev, L. E., Melentyev, G. A., Nykänen, H., Riuttanen, L., Serov, A. Yu, Suihkonen, S., Svensk, O., Filisofov, N. G., Shalygin, V. A., Shelukhin, L. A.
Format: Article
Language:English
Subjects:
Analysis
Electric properties
Epitaxy
Gallium nitrate
Liquors
Optical Properties
Photoluminescence
Physics
Physics and Astronomy
Raman spectroscopy
Silicon
Solid State Physics
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Summary:The optical and electrical properties of silicon-doped epitaxial gallium nitride layers grown on sapphire have been studied. The studies have been performed over a wide range of silicon concentrations on each side of the Mott transition. The critical concentrations of Si atoms corresponding to the formation of an impurity band in gallium nitride (∼2.5 × 10 18 cm −3 ) and to the overlap of the impurity band with the conduction band (∼2 × 10 19 cm −3 ) have been refined. The maximum of the photoluminescence spectrum shifts nonmonotonically with increasing doping level. This shift is determined by two factors: (1) an increase in the exchange interaction leading to a decrease in the energy gap width and (2) a change in the radiation mechanism as the donor concentration increases. The temperature dependence of the exciton luminescence with participating optical phonons has been studied. The energies of phonon-plasmon modes in GaN: Si layers with different silicon concentrations have been measured using Raman spectroscopy.
ISSN:1063-7834
1090-6460
DOI:10.1134/S1063783415040046