Light emitting diode–photodiode optoelectronic pairs based on the InAs/InAsSb/InAsSbP heterostructure for the detection of carbon dioxide

The spectral characteristics of light emitting diodes based on a InAs/InAsSb/InAsSbP heterostructure, which emit in a wavelength range of 3.5–4.5 µm, are investigated experimentally. It is shown that the temperature shift of the maximum emission wavelength of a light emitting diode in the temperatur...

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Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2015-07, Vol.49 (7), p.980-983
Main Authors: Bezyazychnaya, T. V., Bogdanovich, M. V., Kabanov, V. V., Kabanau, D. M., Lebiadok, Y. V., Parashchuk, V. V., Ryabtsev, A. G., Ryabtsev, G. I., Shpak, P. V., Shchemelev, M. A., Andreev, I. A., Kunitsyna, E. V., Sherstnev, V. V., Yakovlev, Yu. P.
Format: Article
Language:English
Subjects:
Carbon dioxide
Light-emitting diodes
Magnetic Materials
Magnetism
Optoelectronics industry
Physics
Physics and Astronomy
Physics of Semiconductor Devices
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Summary:The spectral characteristics of light emitting diodes based on a InAs/InAsSb/InAsSbP heterostructure, which emit in a wavelength range of 3.5–4.5 µm, are investigated experimentally. It is shown that the temperature shift of the maximum emission wavelength of a light emitting diode in the temperature range 80–313 K is 1.8 nm/K. The temperature dependence of the band gap of the InAs 0.88 Sb 0.12 active layer is described by the Varshni formula with the characteristic parameters: E g0 = 0.326 eV, a = 2.917 × 10 –4 eV/K, and ß = 168.83 K. The results of our measurements of the concentrations of carbon dioxide (CO 2 ) using the studied light emitting diodes show the possibility of the reliable detection of CO 2 in the concentration range 300–100000 ppm.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782615070052