Electron conductivity in GeTe and GeSe upon ion implantation of [Bi.sup.1]

This paper presents results on ion implantation of bismuth in GeTe and GeSe films. The conductivity and the thermopower of amorphous chalcogenide films are investigated. Electron conductivity in the films is attained at the Bi implantation doses higher than (1.5-2) X [10.sup.16] [cm.sup.-2]. In conj...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2015-12, p.1640
Main Author: Fedorenko, Ya. G
Format: Article
Language:English
Subjects:
Alloys
Electric properties
Raman spectroscopy
Online Access:Get full text
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Summary:This paper presents results on ion implantation of bismuth in GeTe and GeSe films. The conductivity and the thermopower of amorphous chalcogenide films are investigated. Electron conductivity in the films is attained at the Bi implantation doses higher than (1.5-2) X [10.sup.16] [cm.sup.-2]. In conjunction with the structural modification in the films as revealed Raman spectroscopy, the results suggest the structural re-arrangement of the amorphous network occurs via weakening the bonds of a lower energy. The onset of electron conductivity is hindered by a stronger bond in an alloy. In GeTe, this is the Ge-Ge bond. DOI: 10.1134/S1063782615120088
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782615120088