Transmission spectra and generation of terahertz pulses in Si[O.sub.2]-GaSe, Ti[O.sub.2]-GaSe, [Ga.sub.2][O.sub.3]-GaSe, and GaSe:S structures

Thin amorphous Si[O.sub.2], Ti[O.sub.2], and [Ga.sub.2][O.sub.3] films were deposited on the surface of GaSe crystals by thermal and magnetron sputtering. It was found that under different technological conditions, the Si[O.sub.2] and Ti[O.sub.2] layers on the surface of GaSe crack, while the [Ga.su...

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Bibliographic Details
Published in:Russian physics journal 2015-12, p.1181
Main Authors: Bereznaya, S.A, Zarubin, A.N, Korotchenko, Z.V, Prudaev, I.A, Red'kin, R.A, Sarkisov, S. Yu, Tolbanov, O.P
Format: Article
Language:English
Subjects:
Analysis
Dielectric films
Electric waves
Electromagnetic radiation
Electromagnetic waves
Sulfur compounds
Thin films
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Summary:Thin amorphous Si[O.sub.2], Ti[O.sub.2], and [Ga.sub.2][O.sub.3] films were deposited on the surface of GaSe crystals by thermal and magnetron sputtering. It was found that under different technological conditions, the Si[O.sub.2] and Ti[O.sub.2] layers on the surface of GaSe crack, while the [Ga.sub.2][O.sub.3] compound forms perfect films. A comparison of the transmission spectra and generation efficiency of terahertz pulses was made for the Si[O.sub.2]-GaSe, Ti[O.sub.2]-GaSe, and [Ga.sub.2][O.sub.3]-GaSe structures and for the GaSe:S 0.9 wt % and GaSe:S 7 wt % crystals. It was found that an increase in the concentration of sulfur in the GaSe:S crystals results in a decrease in the efficiency of generation of terahertz radiation by optical rectification of femtosecond laser pulses. Among the films deposited on the surface of GaSe, the Si[O.sub.2] film has the least impact on the efficiency of generation. Keywords: transmission spectra, thin films, generation of terahertz radiation, gallium selenide, gallium oxide.
ISSN:1064-8887
1573-9228
DOI:10.1007/s11182-015-0629-z