Electrical characteristics of n-GaAs--anode film--[Ga.sub.2][o.sub.3]-metal structures

The influence of oxygen plasma and thermal annealing at 900°C on the capacitance--voltage and conductivity--voltage characteristics of n-GaAs--(anodic oxide)--metal structures is studied. In contrast to the unannealed structures, high-temperature annealing in Ar for 30 min leads to the emergence of...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2012-08, Vol.46 (8)
Main Authors: Kalygina, V.M, Valiev, K.I, Zarubin, A.N, Petrova, Yu. S, Tolbanov, O.P, Tyazhev, A.V, Yaskevich, T.M
Format: Article
Language:English
Subjects:
Annealing
Electric properties
Gallium arsenide
Online Access:Get full text
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Summary:The influence of oxygen plasma and thermal annealing at 900°C on the capacitance--voltage and conductivity--voltage characteristics of n-GaAs--(anodic oxide)--metal structures is studied. In contrast to the unannealed structures, high-temperature annealing in Ar for 30 min leads to the emergence of a voltage dependence of the capacitance (C) and conductivity (G). The influence of oxygen plasma on a [Ga.sub.2][O.sub.3] film before annealing promotes additional variation in the capacitance--voltage and conductivity--voltage characteristics. DOI: 10.1134/S1063782612080088
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782612080088