Kinetics of silicon precipitation in a directionally crystallized binary aluminum-silicon alloy

The precipitation of silicon atoms in aluminum in an Al-Si alloy has been studied using differential scanning calorimetry. The alloys containing 8, 13, and 15 wt % silicon were obtained by directional solidification of a ribbon pulled from the melt through a shaper by the Stepanov method at a rate o...

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Bibliographic Details
Published in:Physics of the solid state 2013-12, Vol.55 (12), p.2549-2553
Main Authors: Egorova, L. M., Korchunov, B. N., Osipov, V. N., Bershtein, V. A., Nikanorov, S. P.
Format: Article
Language:English
Subjects:
Calorimetry
Impurity Centers
Physics
Physics and Astronomy
Rain and rainfall
Silicon
Silicon alloys
Solid State Physics
Specialty metals industry
Toy industry
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Summary:The precipitation of silicon atoms in aluminum in an Al-Si alloy has been studied using differential scanning calorimetry. The alloys containing 8, 13, and 15 wt % silicon were obtained by directional solidification of a ribbon pulled from the melt through a shaper by the Stepanov method at a rate of about 10 3 μm/s. From the characteristics of the exothermic effects observed in the temperature range 430–650 K, it has been found that the precipitation process leading to the formation of the Guinier-Preston zones occurs with the effective activation energy of 75 kJ/mol, and its intensity decreases with increasing silicon content in the alloy from 8 wt % to the eutectic content. The effect correlates with a decrease in the volume fraction of dendrites of the primary α-Al crystals in the alloy. It can be assumed that the precipitation occurs in the dendrite primary crystals of the solid solution. Based on this assumption, it has been concluded that, during directional solidification of an aluminum-silicon alloy at a rate of 10 3 μm/s, the metastable solid solution of silicon in aluminum, in which silicon atoms of the metallic lattice are transformed into clusters with covalent bonding forces, is formed during the dendrite growth of the primary crystals.
ISSN:1063-7834
1090-6460
DOI:10.1134/S1063783413120123