Electron mobilities in isomorphic [In.sub.0.53][Ga.sub.0.47]As quantum wells on InP substrates

The influence of the doping level, illumination, and width of isomorphic [In.sub.0.52][Al.sub.0.48]As/[In.sub.0.53][Ga.sub.0.47]As/[In.sub.0.52][Al.sub.0.48] As quantum wells grown on InP substrates on the electron mobility is studied. The persistent photoconductivity at low temperatures is found. B...

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Bibliographic Details
Published in:Journal of experimental and theoretical physics 2013-05, Vol.116 (5), p.755
Main Authors: Kulbachinskii, V.A, Lunin, R.A, Yuzeeva, N.A, Vasilevskii, I.S, Galiev, G.B, Klimov, E.A
Format: Article
Language:English
Subjects:
Electron transport
Electrons
Quantum wells
Online Access:Get full text
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Summary:The influence of the doping level, illumination, and width of isomorphic [In.sub.0.52][Al.sub.0.48]As/[In.sub.0.53][Ga.sub.0.47]As/[In.sub.0.52][Al.sub.0.48] As quantum wells grown on InP substrates on the electron mobility is studied. The persistent photoconductivity at low temperatures is found. Band diagrams are calculated and optimal parameters are found for obtaining the maximum electron mobility. The quantum and transport electron mobilities in dimensional quantization subbands are obtained from the Shubnikov-de Haas effect. The electron mobilities are calculated in dimensional quantization subbands upon scattering by ionized impurities taking intersubband transitions into account. Scattering by ionized impurities in samples studied is shown to be dominant at low temperatures.
ISSN:1063-7761
1090-6509
DOI:10.1134/S1063776113050063