Self-Assembling Nanostructures and Atomic Layer Precise Etching in Molecular Beam Epitaxy

We report on the preparation of 10 nm lateral size semiconductor structures based on island formation in strained layer growth in molecular beam epitaxy. Red light emitting InP quantum dot injection lasers are presented. They contain densely stacked layers of self-assembled InP quantum dots embedded...

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Bibliographic Details
Main Authors: Eberl, K, Zundel, M K, Schuler, H
Format: Report
Language:English
Subjects:
Atomic and Molecular Physics and Spectroscopy
ATOMIC LAYER EPITAXY
COMPONENT REPORTS
DIODE LASERS
ETCHING
FOREIGN REPORTS
GERMANY
INJECTION LASERS
MOLECULAR BEAM EPITAXY
NANOSTRUCTURES
PRECISION
PREPARATION
QUANTUM DOTS
RED(COLOR)
SEMICONDUCTORS
STRUCTURES
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Summary:We report on the preparation of 10 nm lateral size semiconductor structures based on island formation in strained layer growth in molecular beam epitaxy. Red light emitting InP quantum dot injection lasers are presented. They contain densely stacked layers of self-assembled InP quantum dots embedded in a Ga(0.51) In(0.49) wave guide layer. In the second part of this contribution we report on a new atomic layer precise etching technique in MBE, which allows improved interface control for the preparation of semiconductor nanostructures. The etching process involves AsBr3 exposure of a GaAs or AlGaAs surface. Switching between atomic layer precise growth and etching is possible within a few seconds. Pres. Internal Workshop on Interfacially Controlled Functional Materials, Schloss Ringberg, Germany, 8-13 Mar 1998. Pub. Solid State Ionics, v131 n1&2, 2000. p61-68 This article is from ADA397655 Internal Workshop on Interfacially Controlled Functional Materials: Electrical and Chemical Properties Held in Schloss Ringberg, Germany on March 8-13, 1998