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MCT Detectors and ROICS for Various Format MWIR and LWIR Arrays

Silicon ROICs for MCT LWIR (4x288, 6x576) and MWIR (128x128) diode matrix arrays were designed, manufactured and tested. MCT layers were grown by MBE technology on (013) GaAs substrates with CdTe/ZnTe buffer layers (lambda co = 11.2 + or - 0.15 microns at T = 78 K) and by LPE technology on (111) CdZ...

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Main Authors: Zabudsky, Vyacheslav V, Sizov, Fiodor F, Reva, Vladimir P, Golenkov, Alexandr G, Derkach, Yuriy P, Korinets, Sergei V, Lysiuk, Ihor O, Vasiliev, V V, Dvoretsky, S A
Format: Report
Language:English
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Summary:Silicon ROICs for MCT LWIR (4x288, 6x576) and MWIR (128x128) diode matrix arrays were designed, manufactured and tested. MCT layers were grown by MBE technology on (013) GaAs substrates with CdTe/ZnTe buffer layers (lambda co = 11.2 + or - 0.15 microns at T = 78 K) and by LPE technology on (111) CdZnTe substrates with HWE passivation layer. The mean detectivity obtained e.g. for 4 x 288 FPAs at T = 78 K and background temperature Tb = 295 K was D*lambda approx. = 1.8 x 10(exp 11) cm/Hz(exp 1/2)/W with st. dev. of approx. 16.5 % (at FOV = 32 deg) and NEDT = 9.0 mK for the arrays tested and are close to the BLIP regime. NEDT measured for 128x128 FPA was about 20+ or - 8 mK. See also ADB381583. RTO-MP-SET-151 Thermal Hyperspectral Imagery (Imagerie hyperspectrale thermique). Meeting Proceedings of Sensors and Electronics Panel (SET) Specialists Meeting held at the Belgian Royal Military Academy, Brussels, Belgium on 26-27 October 2009., The original document contains color images.