High Electron Mobility Transistors (HEMT). Selected Papers

Publication comprised of three papers: 1) Polarization field mapping of Al0.85In0.15N/AlN/GaN heterostructure by Lin Zhou et al. Published in Applied Physics Letter 94, 121909 (2009); 2) Figures of merit in high-frequency and high-power GaN HEMTs by F. A. Marino et al. Published in Journal of Physic...

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Bibliographic Details
Main Authors:	Zhou, Lin, Cullen, David A, Smith, David J, McCartney, Martha R, Marin, F A, Faralli, N, Ferry, D K, Goodnick, S M, Saraniti, M, Mouti, Anas
Format:	Report
Language:	eng
Subjects:	ALUMINUM GALLIUM NITRIDES ELECTRIC FIELDS Electrical and Electronic Equipment FIGURE OF MERIT HETEROSTRUCTURES HIGH ELECTRON MOBILITY TRANSISTORS INDIUM ALLOYS MICROWAVE EQUIPMENT MOLECULAR STRUCTURE OFF-AXIS ELECTRON HOLOGRAPHY PE62204F POLARIZATION FIELD MAPPING WUAFRL2002110B
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Summary:	Publication comprised of three papers: 1) Polarization field mapping of Al0.85In0.15N/AlN/GaN heterostructure by Lin Zhou et al. Published in Applied Physics Letter 94, 121909 (2009); 2) Figures of merit in high-frequency and high-power GaN HEMTs by F. A. Marino et al. Published in Journal of Physics: Conference Series 193 (2009) 012040; and 3) Advanced electron Microscopy Characterization of GaN-based high electron mobility transistors by D. A. Cullen et al. Presented at the International Conference on Advanced Materials (11th), ICAM 2009, 20-25 September 2009, Rio de Janeiro, Brazil. This document contains color. Prepared in cooperation with Ecole Polytechnique Federale de Lausanne (EPFL), Virginia Commonwealth University and Freescale Semiconductor Inc..